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    TRANSISTOR A22 Search Results

    TRANSISTOR A22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SC6145A


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    PDF 2SA2223A 2SC6145A

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –260 V


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    PDF 2SA2223 2SC6145 2SA1668A

    transistor A2210

    Abstract: ENA0667B 2sa2210 2SA2210-1E
    Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


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    PDF ENA0667B 2SA2210 150ement, A0667-7/7 transistor A2210 ENA0667B 2sa2210 2SA2210-1E

    transistor A2210

    Abstract: 2SA2210
    Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


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    PDF 2SA2210 ENA0667B A0667-7/7 transistor A2210 2SA2210

    transistor A2210

    Abstract: a2210 2sa2210
    Text: 2SA2210 Ordering number : ENA0667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


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    PDF ENA0667A 2SA2210 A0667-5/5 transistor A2210 a2210 2sa2210

    SGA-2286

    Abstract: DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
    Text: Product Description Stanford Microdevices’ SGA-2286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    PDF SGA-2286 SGA-2286 DC-3500 EDS-100625 DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier

    SGA-2263

    Abstract: A22 T transistor transistor data cd
    Text: Product Description Stanford Microdevices’ SGA-2263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    PDF SGA-2263 SGA-2263 DC-3500 EDS-100626 A22 T transistor transistor data cd

    transistor A2222

    Abstract: A2222 2SA2222SG 2sa2222 ENA1799 A1799 2SA22
    Text: 2SA2222SG Ordering number : ENA1799 SANYO Semiconductors DATA SHEET 2SA2222SG PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Adoption of MBIT process


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    PDF 2SA2222SG ENA1799 --10A) --250mV A1799-4/4 transistor A2222 A2222 2SA2222SG 2sa2222 ENA1799 A1799 2SA22

    transistor A2222

    Abstract: a2222 2SA2222SG ENA1799B A1799 2SA2222 a2222sg 2SA222 D2612 ENA1799
    Text: 2SA2222SG Ordering number : ENA1799B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A


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    PDF ENA1799B 2SA2222SG --10A) --250mV A1799-7/7 transistor A2222 a2222 2SA2222SG ENA1799B A1799 2SA2222 a2222sg 2SA222 D2612 ENA1799

    transistor A2222

    Abstract: A2222
    Text: 2SA2222SG Ordering number : ENA1799B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A


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    PDF 2SA2222SG ENA1799B --10A) --250mV A1799-7/7 transistor A2222 A2222

    transistor A2222

    Abstract: a2222 TO-220F-3SG ENA1799A 2SA2222SG SC-67 2SA22
    Text: 2SA2222SG Ordering number : ENA1799A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A


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    PDF ENA1799A 2SA2222SG --10A) --250mV A1799-7/7 transistor A2222 a2222 TO-220F-3SG ENA1799A 2SA2222SG SC-67 2SA22

    2sa2219

    Abstract: A2219 2SC6139 2sa221 2-7D101A 2SA22
    Text: 2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 ○ Audio Frequency Amplifier Applications • High collector voltage Unit: mm : VCEO = -160 V min • Small collector output capacitance : Cob = 17pF • High transition frequency : fT = 100MHz (typ.)


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    PDF 2SA2219 100MHz 2SC6139 -55lled 2sa2219 A2219 2SC6139 2sa221 2-7D101A 2SA22

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    PDF 2SA2223A T01-004JA-081027

    2SA2223A

    Abstract: A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    PDF 2SA2223A 2SA2223A A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35

    2SA2223

    Abstract: multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    PDF 2SA2223 2SA2223 multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor

    2SA1668A

    Abstract: 2sa2223 transistor a2223 A2223 2SC6145 transistor TO-3P Outline Dimensions sanken transistor TRansistor C 101 G746 rohs 2SC614
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    PDF 2SA2223 2SC6145 2SA1668A 2SA1668A transistor a2223 A2223 2SC6145 transistor TO-3P Outline Dimensions sanken transistor TRansistor C 101 G746 rohs 2SC614

    2SA2210-1E

    Abstract: transistor A2210
    Text: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage


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    PDF ENA0667B 2SA2210 O-220F-3SG A0667-7/7 2SA2210-1E transistor A2210

    SGA-2263-TR1

    Abstract: SGA-2263
    Text: Preliminary Product Description SGA-2263 Stanford Microdevices’ SGA-2263 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-2263 SGA-2263 50-ohm DC-3500 EDS-100626 SGA-2263-TR1

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    021B2

    Abstract: transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa
    Text: Nicht für N eu entw icklun g PNP-Mesatransistor für HF-Anwendungen bis 900 MHz AFY16 A FY 16 ist ein PNP-Germanium-Transistor in Mesa-Techmk um Gehäuse 18 A 4 DIN 41 876 T O -72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor A FY 16 ist für


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    PDF Q60106-Y16 B63310-K1-A12 021B2 transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa

    AFY16

    Abstract: Germanium Transistor 71lb 21b22
    Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.


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    PDF AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    PDF BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B

    A22 T transistor

    Abstract: RS Components transistor t03
    Text: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)


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    PDF A22-4015 A22 T transistor RS Components transistor t03