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    TRANSISTOR A1DE Search Results

    TRANSISTOR A1DE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1DE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    verilog code for 4 bit ripple COUNTER

    Abstract: Quartus II Handbook version 9.1 image processing
    Text: Section I. Stratix II GX Device Data Sheet This section provides designers with the data sheet specifications for Stratix II GX devices. They contain feature definitions of the transceivers, internal architecture, configuration and JTAG boundaryscan testing information, DC operating conditions, AC timing


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    a 1757 transistor

    Abstract: Cyclone II FPGA vhdl code for asynchronous fifo TH 2028 3414 TRANSISTOR
    Text: Section I. Stratix II GX Device Data Sheet This section provides designers with the data sheet specifications for Stratix II GX devices. They contain feature definitions of the transceivers, internal architecture, configuration and JTAG boundaryscan testing information, DC operating conditions, AC timing


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    Untitled

    Abstract: No abstract text available
    Text: H M -8 8 1 6 H -8 £ H A R R I S 16 K x 8 High Speed Asynchronous June 1989 CMOS Static RAM Module P in o u t Features T O P V IE W • Low Standby Supply C urrent . 8 0 0 jjA • Low Operating Supply C u rre n t. 400m A


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    d114 digital transistor

    Abstract: PM7226AFP INTERFACING OUTPUT DISPLAYS 8212 3 phase sine wave generation ta 7226 M7226
    Text: ANALOG DEVICES Quad 8-Bit CMOS D/A Converters With Voltage Output FEATURES • No Adjustments Required, Total Error ±1/2 LSB Max Over Temperature • Four Voltage Output DACs on a Single Chip • Single +5V to +15V or Dual Supply • Improved PM-7226A Version Provides


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    PM-7226A PM-7226 PM-7226 d114 digital transistor PM7226AFP INTERFACING OUTPUT DISPLAYS 8212 3 phase sine wave generation ta 7226 M7226 PDF