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    TRANSISTOR A1727 Search Results

    TRANSISTOR A1727 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1727 Datasheets Context Search

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    A1727

    Abstract: A1727 transistor
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for


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    PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 A1727 transistor

    A1727 transistor

    Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V


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    PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 C1000 A1727 transistor transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63