Marking Code ES SOT-89
Abstract: DN5SW dn5s
Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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DN3535
DN3535
O-243AA
OT-89)
O-243,
DSFP-DN3535
A122707
Marking Code ES SOT-89
DN5SW
dn5s
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Untitled
Abstract: No abstract text available
Text: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2424
TP2424
O-243AA
OT-89)
O-243,
DSFP-TP2424
A122707
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Untitled
Abstract: No abstract text available
Text: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2501
110pF
TN2501
O-243AA
OT-89)
O-243,
DSFP-TN2501
A122707
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TP5L
Abstract: No abstract text available
Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TP2502
125pF
TP2502
O-243AA
OT-89)
O-243,
DSFP-TP2502
A122707
TP5L
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TN2504
Abstract: SOT89 FET marking TN5LW
Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2504
125pF
TN2504
O-243AA
OT-89)
O-243,
DSFP-TN2504
A122707
SOT89 FET marking
TN5LW
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jedec package TO-243AA
Abstract: FET marking code 365
Text: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2435
150pF
TN2435
O-243AA
OT-89)
O-243,
DSFP-TN2435
A122707
jedec package TO-243AA
FET marking code 365
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Untitled
Abstract: No abstract text available
Text: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0104
TN0104
O-243AA
OT-89)
O-243,
DSFP-TN0104
A122707
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Untitled
Abstract: No abstract text available
Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2540
125pF
TP2540
O-243AA
OT-89)
O-243,
DSFP-TP2540
A122707
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SOT89 FET marking
Abstract: SOT 213 MARKING diode sot-89 marking code FET SOT-89 N-Channel sot-89 fet
Text: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2535
125pF
TN2535
O-243AA
OT-89)
O-243,
DSFP-TN2535
A122707
SOT89 FET marking
SOT 213 MARKING
diode sot-89 marking code
FET SOT-89 N-Channel
sot-89 fet
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sot-89 na
Abstract: Marking N8 diode sot-89 marking code marking oc diode sot89
Text: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2435
TP2435
O-243AA
OT-89)
O-243,
DSFP-TP2435
A122707
sot-89 na
Marking N8
diode sot-89 marking code
marking oc diode sot89
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Untitled
Abstract: No abstract text available
Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2504
125pF
O-243AA
OT-89)
O-243,
DSFP-TN2504
A122707
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ZENER SOT89
Abstract: transistor a1227
Text: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection
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A1225,
A1227,
A1229
ZENER SOT89
transistor a1227
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a1227
Abstract: transistor a1227 lt4060 A1225LUA-T
Text: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection
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A1225,
A1227,
A1229
a1227
transistor a1227
lt4060
A1225LUA-T
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A1229
Abstract: a1227 transistor a1227 A1225 C1418 A1225L A122x a1227llttr
Text: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection
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A1225,
A1227,
A1229
A1229
a1227
transistor a1227
A1225
C1418
A1225L
A122x
a1227llttr
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GH-027
Abstract: A1227 A3187
Text: A3185, A3187, A3188, and A3189 Protected Quad Driver with Fault Detection and Sleep Mode Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: October 31, 2005
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A3185,
A3187,
A3188,
A3189
A1225
A1227
A1229
GH-027
A1227
A3187
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A1225
Abstract: A1225LLTTK-T transistor a1227 A1227LLTTK-T 140 hall
Text: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection
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A1225,
A1227,
A1229
A1225
A1225LLTTK-T
transistor a1227
A1227LLTTK-T
140 hall
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transistor a1227
Abstract: A1227 A1225 A1229 transistor a1225 A1225-DS A1225LUA-T A1227LLTTR-T
Text: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection
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A1225,
A1227,
A1229
transistor a1227
A1227
A1225
transistor a1225
A1225-DS
A1225LUA-T
A1227LLTTR-T
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ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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A1306 TRANSISTOR
Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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80C186EC/80C188EC
82C59A
Index-10
A1306 TRANSISTOR
A1273
A1266
transistor a1266
a1273 transistor
a1232
transistor A1267
transistor a1276
a1273 transistor scheme
a1273 y transistor
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transistor A1011
Abstract: a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267
Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions
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80C186EC/80C188EC
82C59A
Index-10
transistor A1011
a1273 transistor scheme
A1266
a1273
a1273 transistor DATA
a1273 transistor
a1232
transistor a1266
A1306 TRANSISTOR
transistor A1267
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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uPC1342
Abstract: UPC1342V b1336 transistor C 2987A A1227A C2987A PC1342V UC1342 D1289 transistor 2987A
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT /¿ P C I 3 4 2 V 5 0 to 110 W POWER AMPLIFIER DRIVER DESCRIPTION /jPC1342V is a integrated m onolithic circuit designed for 50 W to H O W class H iFi audio power am plifier and consists of a input differential amplifier, a predhver circuit, a driver circuit and a over current protection circuit.
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uPC1342V
PC1342V
uPC1342
b1336
transistor C 2987A
A1227A
C2987A
PC1342V
UC1342
D1289
transistor 2987A
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