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    TRANSISTOR A1031 Search Results

    TRANSISTOR A1031 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1031 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    Untitled

    Abstract: No abstract text available
    Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF DN2530 DN2530 DSFP-DN2530 A103108

    mos fet marking k4

    Abstract: dn37 DN3765 DN3765K4-G
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A103108 mos fet marking k4 dn37 DN3765 DN3765K4-G

    DN5SW

    Abstract: DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA
    Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF DN3535 DSFP-DN3535 A103108 DN5SW DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA

    transistor MARKING K4

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 DSFP-DN3765 A103108 689-DN3765K4-G DN3765K4-G transistor MARKING K4

    Untitled

    Abstract: No abstract text available
    Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the


    Original     		PDF DN3535 DSFP-DN3535 A103108

    DN2530

    Abstract: siemens N3 relay 125OC DN2530N3-G DN2530N8-G DN5TW
    Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF DN2530 DN2530 DSFP-DN2530 A103108 siemens N3 relay 125OC DN2530N3-G DN2530N8-G DN5TW

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of


    Original     		PDF DN3765 DSFP-DN3765 A103108

    125OC

    Abstract: DN3145 DN3145N8-G
    Text: DN3145 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN3145 is a depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF DN3145 DN3145 DSFP-DN3145 A103108 125OC DN3145N8-G

    Untitled

    Abstract: No abstract text available
    Text: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND250 DSFP-LND250 A103108

    LN1E

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND150 DSFP-LND150 A10310808 LN1E

    MARKING G3 Transistor

    Abstract: No abstract text available
    Text: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors


    Original     		PDF VN2222NC 20-Lead DSFP-VN2222NC A103108 MARKING G3 Transistor

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1000 MHz A1031/ SMA1031 V3 Features • • • • Product Image HIGH EFFICIENCY: 36 mA at +5 Vdc LOW NOISE FIGURE: 2.7 dB TYP. HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A1031/ SMA1031 A1031RF MIL-STD-883 A1031 SMA1031rized

    Bipolar Integrated Technology

    Abstract: SMA1031 A1031 CA1031
    Text: A1031 / SMA1031 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH EFFICIENCY: 36 mA at +5 Vdc LOW NOISE FIGURE: 2.7 dB TYP. HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A1031 SMA1031 A1031RF MIL-STD-883 Bipolar Integrated Technology SMA1031 CA1031

    transistor a1031

    Abstract: SMA1031 A1031 CA1031 3 w RF POWER TRANSISTOR 2.7 ghz
    Text: A1031/SMA1031 10 TO 1000 MHz CASCADABLE AMPLIFIER •HIGH EFFICIENCY: 36 mA at +5 Vdc ·LOW NOISE FIGURE: 2.7 dB TYP. ·HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) ·MED OUTPUT POWER: +10 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)*


    Original     		PDF A1031/SMA1031 A1031 SMA1031 CA1031 transistor a1031 SMA1031 A1031 CA1031 3 w RF POWER TRANSISTOR 2.7 ghz

    SMA1031

    Abstract: transistor a1031 A1031 CA1031 SMA-103
    Text: A1031/SMA1031 10 TO 1000 MHz CASCADABLE AMPLIFIER •HIGH EFFICIENCY: 36 mA at +5 Vdc ·LOW NOISE FIGURE: 2.7 dB TYP. ·HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) ·MED OUTPUT POWER: +10 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)*


    Original     		PDF A1031/SMA1031 A1031 SMA1031 CA1031 SMA1031 transistor a1031 A1031 CA1031 SMA-103

    two transistor forward

    Abstract: siemens RC snubber smps transformer Design half bridge smps transformer design full bridge smps basic PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES Single phase half wave bridge converter 24 volt output smps design AN-CoolMOS-02 resonant single ended forward converter
    Text: Version 1.0 , June 2000 Application Note AN-CoolMOS-08 SMPS Topologies Overview Author: Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g SMPS Topologies Overview This application note gives a briefly overview of major state of the art SMPS topologies.


    Original     		PDF AN-CoolMOS-08 Room14J1 Room1101 two transistor forward siemens RC snubber smps transformer Design half bridge smps transformer design full bridge smps basic PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES Single phase half wave bridge converter 24 volt output smps design AN-CoolMOS-02 resonant single ended forward converter

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    TDA 16846 P

    Abstract: tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605
    Text: Version 1.0 , March 2000 Application Note AN-SMPS-CoolMOS-1 SMPS with CoolMOS and TDA 16846x Author: Peter Preller Published by Infineon Technologies AG http://www.infineon.com Power Conversion Titel: Infineon Logo 4c.eps Erstellt von: Adobe Illustrator(R) 8.0


    Original     		PDF 16846x PostScript-Druc90 Room14J1 Room1101 TDA 16846 P tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605

    SFH617-3

    Abstract: vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


    Original     		PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 SFH617-3 vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617

    siemens GR 60 rectifier

    Abstract: B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 TDA1683X SFH617-3 siemens GR 90 rectifier
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


    Original     		PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 siemens GR 60 rectifier B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 SFH617-3 siemens GR 90 rectifier

    TDA16822

    Abstract: ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite
    Text: Version 1.3 , Sept. 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply


    Original     		PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 TDA16822 ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    Untitled

    Abstract: No abstract text available
    Text: uuU A1031 / SMA1031 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH EFFICIENCY: 36 mA at +5 Vdc ♦ LOW NOISE FIGURE: 2.7 dB TYR ♦ HIGH GAIN, TWO STAGES: 28.5 dB (TYR) ♦ MED OUTPUT POWER: +10 dBm (TYP.) Outline Drawings


    OCR Scan     		PDF A1031 SMA1031 A1031 50-ohm