2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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L1207
Abstract: 2sk2482
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE D IM E N SIO N S The2SK2482 is N-Channel MOS Field Effect Transistor designed in m illim eter for high voltage switching applications. FEATURES
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2SK2482
The2SK2482
L1207
2sk2482
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B81121 X2 mkt
Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r
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AN-TDA16888-0-010323
100kHz
V/18A;
-12V/1A;
V/100mA
Room14J1
Room1101
B81121 X2 mkt
B81121 X2 mkp
AN-TDA16888-0-010323
ELKO capacitors
MKT .22K 250V X2
EPCOS 230 00 O
ELKO CAPACITOR 63v 2,2
elko capacitor
TDA 16888
B81121 X2
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Untitled
Abstract: No abstract text available
Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2530
DN2530
DSFP-DN2530
A103108
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power
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uPA1702
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a1037
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power
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uPA1700A
a1037
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mos fet marking k4
Abstract: dn37 DN3765 DN3765K4-G
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
DSFP-DN3765
A103108
mos fet marking k4
dn37
DN3765
DN3765K4-G
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DN5SW
Abstract: DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA
Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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DN3535
DSFP-DN3535
A103108
DN5SW
DN3535N8-G
dn5s
125OC
DN3535
marking code sot-89 AA
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transistor MARKING K4
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
DSFP-DN3765
A103108
689-DN3765K4-G
DN3765K4-G
transistor MARKING K4
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Untitled
Abstract: No abstract text available
Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the
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DN3535
DSFP-DN3535
A103108
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a1034
Abstract: No abstract text available
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and
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PA1552B
PA1552BH
a1034
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DN2530
Abstract: siemens N3 relay 125OC DN2530N3-G DN2530N8-G DN5TW
Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2530
DN2530
DSFP-DN2530
A103108
siemens N3 relay
125OC
DN2530N3-G
DN2530N8-G
DN5TW
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Untitled
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of
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DN3765
DSFP-DN3765
A103108
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125OC
Abstract: DN3145 DN3145N8-G
Text: DN3145 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN3145 is a depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN3145
DN3145
DSFP-DN3145
A103108
125OC
DN3145N8-G
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LN1E
Abstract: No abstract text available
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
DSFP-LND150
A10310808
LN1E
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MARKING G3 Transistor
Abstract: No abstract text available
Text: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors
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VN2222NC
20-Lead
DSFP-VN2222NC
A103108
MARKING G3 Transistor
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PA1500B
Abstract: PA1500BH
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ju P A 1 5 0 0 B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for
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uPA1500B
uPA1500BH
PA1500B
PA1500BH
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a103g
Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1
Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE
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UPA103G
UPA103G
2500/REEL
A103G
UPA103G-E1
34-6393/FAX
a103g
a103g transistors
transistor micro-x q6
Monolithic Transistor Pair
UPA103G-E1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR _j u P A 1 7 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect T ran in millimeter sistor designed for DC/DC converter and power man
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a103g
Abstract: a103g transistors UPA103G UPA103G-E1
Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE
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UPA103G
UPA103G
UPA103G-E1
24-Hour
a103g
a103g transistors
UPA103G-E1
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A1035T
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion bat
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transistor ba 752
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K2510 is N-Channel MOS Field Effect T ransistor designed for high current switching applications. FEATURES • Super Low O n-Resistance R d s on 1 = 2 0 m O (V g s = 1 0 V , Id = 2 0
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2SK2510
2SK2510
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A103G
Abstract: a103g transistors
Text: NEC TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM Top view • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: UPA103G T w o of th e s e use a c o m m o n e m itte r pin an d ca n b e 14 u sed as d ifferen tial am p lifiers 13 12 11
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UPA103G
UPA103G
UPA103G-E1
2500/REEL
A103G
a103g transistors
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