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    TRANSISTOR A1026 DETAILS Search Results

    TRANSISTOR A1026 DETAILS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1026 DETAILS Datasheets Context Search

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    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor