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    TRANSISTOR A 1015 Search Results

    TRANSISTOR A 1015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 1015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5311DW1T1 MUN5316DW1T1

    1015 TRANSISTOR DATASHEET

    Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR
    Text: 1015 MP 15 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes


    Original     		PDF 25oC2 1015 TRANSISTOR DATASHEET transistor 1015 transistor a 1015 1015 TRANSISTOR

    1015MP

    Abstract: No abstract text available
    Text: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability.


    Original     		PDF 1015MP 25oC2 150oC 200oC 1015MP

    1015 TRANSISTOR DATASHEET

    Abstract: 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR
    Text: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for


    Original     		PDF 1015MP 55FW-1 25oC2 1015 TRANSISTOR DATASHEET 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR

    PBSS306NZ

    Abstract: PBSS306PZ SC-73 PBSS306PZ,135
    Text: PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS306PZ OT223 SC-73) PBSS306NZ. PBSS306PZ PBSS306NZ SC-73 PBSS306PZ,135

    S306PZ

    Abstract: PBSS306NZ PBSS306PZ SC-73
    Text: PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS306PZ OT223 SC-73) PBSS306NZ. PBSS306PZ S306PZ PBSS306NZ SC-73

    MJE-13001

    Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R


    Original     		PDF MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 MJE13001 C 2025 npn 600v to92 transistor mje13001

    MJE-13001

    Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R


    Original     		PDF MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92

    QT14

    Abstract: QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech
    Text: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz QT14 QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech

    54616B

    Abstract: No abstract text available
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz 54616B

    TO8 package

    Abstract: OF 12mhz crystal
    Text: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz TO8 package OF 12mhz crystal

    transistor TO5 Outline Dimensions

    Abstract: No abstract text available
    Text: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 MIL-PRF-55310/09 and/10 10kHz 20MHz, transistor TO5 Outline Dimensions

    qt116

    Abstract: QT1T qt11 transistor TO5 Outline Dimensions
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10K/10KH qt116 QT1T qt11 transistor TO5 Outline Dimensions

    transistor TO5 Outline Dimensions

    Abstract: TO-5 PACKAGE case for transistor
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz transistor TO5 Outline Dimensions TO-5 PACKAGE case for transistor

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


    Original     		PDF 15Vdc 045Hz 125MHz EAR99 M17677 125MHz MIL-PRF-55310/09 and/10 10kHz

    S306PZ

    Abstract: No abstract text available
    Text: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS306PZ OT223 SC-73) PBSS306NZ. AEC-Q101 S306PZ

    A1015 smd type

    Abstract: No abstract text available
    Text: PBSS306PX 100 V, 3.7 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS306PX SC-62/TO-243) PBSS306NX. PBSS306PX A1015 smd type

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R


    Original     		PDF MJE13001 MJE13001L-x-AB3-A MJE13001G-x-AB3-A-R MJE13001L-x-AB3-F MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B

    MJE13001

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R


    Original     		PDF MJE13001 MJE13001G-x-AB3-A-R OT-89 MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B MJE13001

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers


    OCR Scan     		PDF BFQ149

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF PHP12N10E T0220AB PHP12N1OE

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable lor surface mounting. Using ’trench’ technology the device


    OCR Scan     		PDF BUK7618-55

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346