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    TRANSISTOR 9707 Search Results

    TRANSISTOR 9707 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9707 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SOT23

    Abstract: BCW31 BCW32 transistor
    Text: 970714 01 SIDA: 1/6 ELFA artikelnr. 71-310-63 BCW31 transistor SOT23 71-310-71 BCW32 transistor SOT23 970714 01 SIDA: 2/6 970714 01 SIDA: 3/6 970714 01 SIDA: 4/6 970714 01 SIDA: 5/6 970714 01 SIDA: 6/6


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    PDF BCW31 BCW32 TRANSISTOR SOT23 transistor

    diode 400V 4A

    Abstract: diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A
    Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF 7072A IRGB4059DPbF O-220AB diode 400V 4A diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A

    IRF1010

    Abstract: 8A2021
    Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF 97073B IRGB4060DPbF IRF1010 O-220AB IRF1010 8A2021

    diode 400V 4A

    Abstract: IRF1010 diode 4A 400v ultra fast
    Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF 7072A IRGB4059DPbF IRF1010 O-220AB diode 400V 4A IRF1010 diode 4A 400v ultra fast

    IRGB4060D

    Abstract: IRF1010 CT4-15
    Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF 97073B IRGB4060DPbF O-220AB IRGB4060D IRF1010 CT4-15

    Untitled

    Abstract: No abstract text available
    Text: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF IRGB4060DPbF IRF1010 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97072 IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF IRGB4059DPbF IRF1010 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    PDF 7072A IRGB4059DPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    PDF 97073B IRGB4060DPbF O-220AB

    2SA1723

    Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
    Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7


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    PDF ENN4668 2SA1723 2009B 2SA1723] 300mA) O-126 2SA1723 ITR04378 ITR04379 ITR04380 ITR04381 ITR04382

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7


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    PDF ENN4668 2SA1723 2009B 2SA1723] 300mA) O-126

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    scientific imaging technologies

    Abstract: SI-003A mpp schematic infrared diode p1d scientific imaging technologies inc ccd incoming inspection SI-424A
    Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 1024 x 1024 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV


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    PDF SI-003A SI-003A, scientific imaging technologies mpp schematic infrared diode p1d scientific imaging technologies inc ccd incoming inspection SI-424A

    scientific imaging technologies

    Abstract: SI-003A SIA003A AD590 mpp schematic scientific imaging technologies inc ccd incoming inspection SI003
    Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 1024 x 1024 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Packaged with a two stage Thermoelectric cooler for improved performance without a dewar


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    SI-502A

    Abstract: scientific imaging technologies SI-424 SI-502 scientific imaging technologies inc Scientific Imaging Technologies, Inc mpp schematic SI-424A ccd 512 x 512
    Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 512 x 512 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV


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    PDF SI-502A SI-502A, scientific imaging technologies SI-424 SI-502 scientific imaging technologies inc Scientific Imaging Technologies, Inc mpp schematic SI-424A ccd 512 x 512

    Dotmatrix

    Abstract: 14 pin hd44780 display
    Text: EA 9707-V24S 8.2001 RS-232C INTERFACE FÜR DOTMATRIX LCD Zubehör: EA KV24-9B Abmessungen 80x32 mm TECHNISCHE DATEN * * * * * * * * * * * * FÜR ALLE DOTMATRIX: 1x8 . 1x16 . 2x16 . 4x16 . 4x20 einschließlich 4x40 VERSORGUNGSSPANNUNG 5V/5mA ODER 9.35V OPTIONAL


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    PDF 9707-V24S RS-232C KV24-9B 80x32 SER404-HNLED SER202-CNLED SER242-NLED SER404-NLW SER308-NLED Dotmatrix 14 pin hd44780 display

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    HCPL-6531

    Abstract: HP optocoupler
    Text: ¥hn\ H E W L E T T m LKM P A C K A R D Transistor Output, Hermetically Sealed Optocoupler Technical Data Features • Manufactured and Tested on a MIL-STD-1772 Certified Line • QML-MIL-H-38534 • Performance Guaranteed Over -55°C to +125C Ambient Temperature


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    PDF MIL-STD-1772 QML-MIL-H-38534 MIL-STD-883 6N135/6, HCPL-2530/31 1430-CMO D-7030 HCPL-6531 HP optocoupler

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


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    PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    Untitled

    Abstract: No abstract text available
    Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r


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    PDF D-7030

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    Untitled

    Abstract: No abstract text available
    Text: HIGH RESOLUTION OPTICAL REFLECTIVE SENSOR H B C S T E C H N IC A L D A T A -1 1 0 0 N O V E M B E R 1984 Features « FOCUSED EMITTER AND DETECTOR IN A SING LE PACKAGE • H IG H RESO LU TIO N — .190mm SPOT SIZE • 700nm VISIBLE EM ITTER • LENS FILTERED TO REJECT A M B IENT LIG H T


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    PDF 190mm 700nm 178mm 94iiU4 -70-30R