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    TRANSISTOR 955 E Search Results

    TRANSISTOR 955 E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 955 E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 955 E

    Abstract: VPS05163 50/TRANSISTOR 955 E
    Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163


    Original     		PDF VPS05163 OT-223 Sep-30-1999 TRANSISTOR 955 E VPS05163 50/TRANSISTOR 955 E

    TRANSISTOR 955 E

    Abstract: VPS05163
    Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration


    Original     		PDF VPS05163 OT-223 Sep-30-1999 TRANSISTOR 955 E VPS05163

    DCA50

    Abstract: DCA50e germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E
    Text: DCA50e component analyser enhanced user guide introduction - automatically. As identification, the measures transistor gain The DCA50e Component Analyser is a highly advanced instrument that provides a wealth of functionality and features in one extremely easy


    Original     		PDF DCA50e DCA50e DCA50 germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E

    DCA50e

    Abstract: DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren
    Text: DCA50e Komponenten-Analysator erweitert Hergestellt in Großbritannien. Peak Electronic Design Ltd. Atlas House, Kiln Lane, Harpur Ind. Est, Buxton, SK17 9JL, U.K. Einleitung Der DCA50e KomponentenAnalysator ist ein zukunftsweisendes Instrument, das eine Vielzahl von


    Original     		PDF DCA50e DCA50e DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren

    transistor 9527

    Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 T 9527 st 9535 9542 mitsubishi data sheet transistor 9527

    transistor 131-6

    Abstract: 4139 temperature TRANSISTOR K 314 p945
    Text: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH


    Original     		PDF EA-072-0006 transistor 131-6 4139 temperature TRANSISTOR K 314 p945

    transistor 4120

    Abstract: AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58
    Text: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors


    Original     		PDF AZ100LVEL58 440ps MC100LVEL58 AZ100LVEL58D AZ100LVEL58T AZM100 LVEL58 AZ100LVEL58N+ AZ100LVEL58NG transistor 4120 AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58

    BTP955L3

    Abstract: No abstract text available
    Text: Spec. No. : C606L3 Issued Date : 2005.02.04 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C606L3 BTP955L3 OT-223 UL94V-0 BTP955L3

    500 watts amplifier schematic diagram pcb layout

    Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
    Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a


    Original     		PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor

    microtek

    Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor
    Text: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors


    Original     		PDF AZ100LVEL58 440ps MC100LVEL58 AZ100LVEL58D AZ100LVEL58T AZM100 LVEL58 AZ100LVEL58N+ AZ100LVEL58NG microtek AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor

    transistor BC 945

    Abstract: RA20H8994M 1000v 200w Transistor RA20H8994M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to


    Original     		PDF RA20H8994M 896-941MHz RA20H8994M 20-watt 941-MHz transistor BC 945 1000v 200w Transistor RA20H8994M-101

    KV58

    Abstract: No abstract text available
    Text: MC100LVEL58 3.3V ECL 2:1 Multiplexer The MC100LVEL58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and works from a 3.3 V supply. With AC performance similar to the EL58 device, the LVEL58 is ideal for low voltage applications which require the ultimate in AC


    Original     		PDF MC100LVEL58 LVEL58 KVL58 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 KV58

    Untitled

    Abstract: No abstract text available
    Text: MC100LVEL59 3.3V ECL Triple 2:1 Multiplexer The MC100LVEL59 is a 3.3 V triple 2:1 multiplexer with differential outputs. The output data of the multiplexers can be controlled individually via the select inputs or as a group via the common select input. The flexible selection scheme makes the device


    Original     		PDF MC100LVEL59 100LVEL59 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1560

    transistor BD 2420

    Abstract: MARKING QB
    Text: MC100LVEL12 3.3V ECL Low Impedance Driver The MC100LVEL12 is a low impedance drive buffer. With two pairs of OR/NOR outputs the device is ideally suited for high drive applications such as memory addressing. The device is functionally equivalent to the EL12 device and operates from a 3.3 V power supply.


    Original     		PDF MC100LVEL12 LVEL12 KVL12 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 transistor BD 2420 MARKING QB

    KVL01

    Abstract: No abstract text available
    Text: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in


    Original     		PDF MC100LVEL01 LVEL01 KVL01 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 955 GENERAL PURPOSE AM PLIFIER APPLICATIONS Unit in mm SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage : VCE (sat) d ) = - 15mV (TyP-) @ Iq = —10mA / Iß = -0.5m A


    OCR Scan     		PDF 2SA1955 400mA

    50/TRANSISTOR 955 E

    Abstract: TCA955 TRANSISTOR 955 E
    Text: 47E » • ñE35bOS DÜ3S2bl ô « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders


    OCR Scan     		PDF E35bOS 7000-A P-DIP-16 Q03S2LS TCA955 T-52-13-25 50/TRANSISTOR 955 E TCA955 TRANSISTOR 955 E

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and


    OCR Scan     		PDF G-200,

    lc 945 p transistor NPN TO 92

    Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
    Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.


    OCR Scan     		PDF

    lc 945 transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20105 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20193 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor D escription The 20193 is a class AB, NPN com m on em itter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minim um output power and may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20135 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor D e s c rip tio n The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP


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    transistor ft 960

    Abstract: IC 7108
    Text: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF