Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 9529 Search Results

    TRANSISTOR 9529 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9529 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. O P T O C O U P L E R S + S O L I D S TAT E R E L AY S www.cel.com 2013 California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound


    Original     		PDF

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


    Original     		PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    RF MOSFET MODULE

    Abstract: MOSFET Amplifier Module H46S
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA03M9595M 952-954MHz RA03M9595M RF MOSFET MODULE MOSFET Amplifier Module H46S

    transistor marking code H11S

    Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    transistor 9527

    Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams

    f953

    Abstract: H11S RA05H9595M RA05H9595M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz f953 H11S RA05H9595M-101

    H11S

    Abstract: RA05H9595M RA05H9595M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz H11S RA05H9595M-101

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595 RA03M9595M 03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA03M9595M 03M9595 952-954MHz RA03M9595M

    MOSFET Amplifier Module

    Abstract: f953 945 mosfet
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA03M9595M 952-954MHz RA03M9595M MOSFET Amplifier Module f953 945 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456767 1234567675 345676758 RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF 952-954MHz RA03M9595M RA03M9595M

    mosfet 9544

    Abstract: mosfet st 9544 transistor 9527 mosfet 9519 mosfet 9517 ST 9527 RF MOSFET MODULE 9529 mosfet 951 t40 9544 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA01L9595M 952-954MHz RA01L9595M mosfet 9544 mosfet st 9544 transistor 9527 mosfet 9519 mosfet 9517 ST 9527 RF MOSFET MODULE 9529 mosfet 951 t40 9544 transistor

    transistor 9527

    Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 T 9527 st 9535 9542 mitsubishi data sheet transistor 9527

    mosfet st 9544

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		PDF RA01L9595M 952-954MHz RA01L9595M mosfet st 9544

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL Customer： Description： Magnetic Buzzer Soberton Part No. ： ST-03BL-1 Date：2015-02-26 Customer Model No. ： Date of Approval Authorization Signature SOBERTON, INC. 211 N. First Street Minneapolis, MN. 55401 Tel：612-849-6205


    Original     		PDF ST-03BL-1 860-1060mbar 1000PCS 330mmx330mmx30mm

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL Customer： Description： Magnetic Buzzer SOBERTON Part No. ：ST-0402T Date：2015-06-26 Customer Model No. ： Date of Approval Authorization Signature 211 North First Street Minneapolis, MN 55401 Tel：612-849-6205 Fax：952-933-3120


    Original     		PDF ST-0402T 860-1060mbar 3000PCS 330mmx330mmx30mm 1x3000PCS

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL Customer： Description： Magnetic Buzzer Soberton Part No. ：ST-0402 Date：2015-06-04 Customer Model No. ： Date of Approval Authorization Signature 211 N. First Street Minneapolis, MN. 55401 Tel：612-849-6205 Fax：952-933-2130


    Original     		PDF ST-0402 4000Test 860-1060mbar 3000PCS 330mmx330mmx30mm 1x3000PCS

    factors on which internal internal resistance of a cell depends experiment

    Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH
    Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.


    Original     		PDF 5M994-N factors on which internal internal resistance of a cell depends experiment Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH

    tape 3m 9448

    Abstract: transistor 1548b MIL-T-55155 1547B transistor 3m 9448 ED203 str 6654 str g 8656 transistor 1547B str 8656
    Text: D E S I G N E R S A N D M A N U FAC T U R E R S RoHS COMPLIANT ~ ISO 9001 CERTIFIED M55 C2-FM3 m 10/23/06 10:19 AM Page C2 Auto & Subminiature Fuse Holders pages 34-37 2 in 1 Fuse Holder page 35 Miniature USB Plugs & Sockets page 88 Thumbscrews & Knobs page 76-84


    Original     		PDF

    w2f transistor

    Abstract: TRANSISTOR w2f w2h transistor 40673 TRANSISTOR capacitor 22nF 1206 transistor w2h transistor 40673 fet 40673 40673 capacitor 104 100v
    Text: A KYOCERA GROUP COMPANY AVX Multilayer Ceramic Feedthru Chip Capacitors And Arrays Feedthru 0805/1206 Capacitors Table of Contents W2F/W3F Series - 0805 & 1206 Feedthru Chips . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W2H/W3H Series - High Current Feedthru Capacitors . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF S-FTCA00M703-C w2f transistor TRANSISTOR w2f w2h transistor 40673 TRANSISTOR capacitor 22nF 1206 transistor w2h transistor 40673 fet 40673 40673 capacitor 104 100v

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


    OCR Scan     		PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601

    GG44

    Abstract: 0P295 OP295
    Text: □ Dual/Quad Rail-to-Rail Operational Amplifiers 0P295/0P495 ANALOG DEVICES PIN CONN ECTIO N S FEATUR ES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 n-V Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V/mV


    OCR Scan     		PDF 0P295/0P495 16-Lead 14-Lead OP-495 09E-14 IE-13 GG44 0P295 OP295

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    signetics 10116

    Abstract: NE5212 Signetics ne5212 NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320
    Text: NE/SA/SE5212 Signetics Transimpedance Amplifier 140MHz Product Specification Linear Products DESCRIPTION FEATURES The NE/SA/SE5212 is a 14ki2 transim­ pedance, wideband, low noise differen­ tial output amplifier, particularly suitable for signal recovery in fiber optic receiv­


    OCR Scan     		PDF NE/SA/SE5212 140MHz) NE/SA/SE5212 14ki2 140MHz NE5212 NE5230 signetics 10116 NE5212 Signetics NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320