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    TRANSISTOR 9407 Search Results

    TRANSISTOR 9407 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9407 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9407A

    Abstract: FHK9407A "Field Effect Transistor" field effect transistor
    Text: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).


    Original     		PDF FHK9407A OT223 OT223 FHK9407A 9407A "Field Effect Transistor" field effect transistor

    IRG4BC20W-S

    Abstract: No abstract text available
    Text: PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W-S 150kHz IRG4BC20W-S

    IRG4BC20W-S

    Abstract: No abstract text available
    Text: PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W-S 150kHz IRG4BC20W-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W-S 150kHz

    Untitled

    Abstract: No abstract text available
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz

    IRG4BC20UD-S

    Abstract: 50s MARKING CODE
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz IRG4BC20UD-S 50s MARKING CODE

    IRG4BC20UD-S

    Abstract: No abstract text available
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz fo197) IRG4BC20UD-S

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    abb r1561

    Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
    Text: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .


    Original     		PDF D0201 D-69006 abb r1561 ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002

    HFA30TA60CS

    Abstract: IRFP250
    Text: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		PDF HFA30TA60CSPbF HFA30TA60CS 18-Jul-08 IRFP250

    HFA30TA60CS

    Abstract: IRFP250
    Text: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC


    Original     		PDF HFA30TA60CSPbF 2002/95/EC AEC-Q101 HFA30TA60CS 18-Jul-08 IRFP250

    Untitled

    Abstract: No abstract text available
    Text: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		PDF HFA30TA60CSPbF HFA30TA60CS 18-Jul-08

    HFA16TA60C

    Abstract: HFA30TA60C
    Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI


    Original     		PDF PD-95689 HFA30TA60CPbF HFA30TA60C 08-Mar-07 HFA16TA60C

    Untitled

    Abstract: No abstract text available
    Text: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		PDF HFA30TA60CSPbF HFA30TA60CS 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 95687A HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A


    Original     		PDF 5687A HFA32PA120CPbF 260nC HFA32PA120C 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		PDF HFA30TA60CSPbF HFA30TA60CS 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC


    Original     		PDF PD-96032 HFA30TA60CSPbF HFA30TA60CS 08-Mar-07

    marking dt2

    Abstract: HFA50PA60C IRFP250
    Text: HFA50PA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 25 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		PDF HFA50PA60CPbF O-247AC HFA50PA60C 18-Jul-08 marking dt2 IRFP250

    P035H

    Abstract: HFA16PA60C HFA32PA120C IRFP250 vs 1838 b 1838 ir
    Text: PD - 95687A HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A


    Original     		PDF 5687A HFA32PA120CPbF 260nC HFA32PA120C 12-Mar-07 P035H HFA16PA60C IRFP250 vs 1838 b 1838 ir

    HFA30TA60C

    Abstract: HFA16TA60C IRFP250 vishay transistor date code dt2 marking code
    Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI


    Original     		PDF PD-95689 HFA30TA60CPbF HFA30TA60C 12-Mar-07 HFA16TA60C IRFP250 vishay transistor date code dt2 marking code

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    acumos

    Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
    Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel


    OCR Scan     		PDF

    nmos pmos array

    Abstract: mf10 A300 list of n channel fet Acumos n channel fet array
    Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel


    OCR Scan     		PDF