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    TRANSISTOR 9050 Search Results

    TRANSISTOR 9050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB775

    Abstract: 2SB77 2SD895 1116MW
    Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3


    Original     		PDF ENN679F 2SB775 2SD895 2SB775/2SD895 2SB775/2SD895] 2SB775 2SB77 2SD895 1116MW

    2SC4615

    Abstract: 2044B 2SA1772
    Text: Ordering number:ENN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).


    Original     		PDF ENN3398A 2SA1772 2SC4615 2SA1772/2SC4615 VCEO400V) 2045B 2SA1772/2SC4615] 2044B 2SC4615 2044B 2SA1772

    MAPRST2729-170M

    Abstract: 15 w RF POWER TRANSISTOR NPN VCC36
    Text: MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor


    Original     		PDF MAPRST2729-170M MAPRST2729-170M 15 w RF POWER TRANSISTOR NPN VCC36

    2SD896

    Abstract: 2SB776
    Text: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package


    Original     		PDF ENN678F 2SB776 2SD896 2SB776/2SD896 00V/7A, 2SB776/2SD896] 2SB776 2SD896. 2SD896

    2SB776

    Abstract: 2SD896 IC TA 7089
    Text: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package


    Original     		PDF ENN678F 2SB776 2SD896 2SB776/2SD896 00V/7A, 2SB776/2SD896] 2SB776 2SD896. 2SD896 IC TA 7089

    MAPHST0034

    Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
    Text: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry


    Original     		PDF MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor

    a 103 m Transistor

    Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
    Text: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration


    Original     		PDF PH1090-75L DS181 a 103 m Transistor A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75

    1030-1

    Abstract: PH1090-15L
    Text: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration


    Original     		PDF PH1090-15L DS180 1030-1 PH1090-15L

    Untitled

    Abstract: No abstract text available
    Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors


    OCR Scan     		PDF PH2323-6 513MM) 5b422D5 00013D3

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry


    OCR Scan     		PDF PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856

    transistor c 3206

    Abstract: transistor j7
    Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7

    T4 0450

    Abstract: transistor j8
    Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-30EL Sb42E05 Sb422DS D001177 T4 0450 transistor j8

    transistor yb

    Abstract: M220S transistor t 04 27
    Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-1OOEL M220S PH0404-lOOEL 5b422DS transistor yb transistor t 04 27

    omni spectra sma

    Abstract: transistor n03 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry


    OCR Scan     		PDF PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856

    transistor 355

    Abstract: SHM-2E CC 1215
    Text: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-2 ShM2E05 transistor 355 SHM-2E CC 1215

    Untitled

    Abstract: No abstract text available
    Text: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-20 5b4220S

    F300

    Abstract: No abstract text available
    Text: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System


    OCR Scan     		PDF PH0303-8 5b422D5 0DD1172 F300

    VCO 1.4 GHz

    Abstract: No abstract text available
    Text: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


    OCR Scan     		PDF PH3135-80M SbM250S VCO 1.4 GHz

    VCC36

    Abstract: No abstract text available
    Text: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    OCR Scan     		PDF PH2729-120M SL4220S VCC36

    100 N 37

    Abstract: No abstract text available
    Text: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching


    OCR Scan     		PDF PH0303-37 SL422DS 100 N 37

    Untitled

    Abstract: No abstract text available
    Text: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF PH0912-150

    transistor f20

    Abstract: No abstract text available
    Text: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors


    OCR Scan     		PDF PH2022-1OSC transistor f20

    Untitled

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    OCR Scan     		PDF 1090-80L

    PH1417-200S

    Abstract: F 140 F140 C5 155 10 PH1417
    Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor


    OCR Scan     		PDF PH1417-200S Sb4220S DDD12L PH1417-200S F 140 F140 C5 155 10 PH1417