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    TRANSISTOR 9024 Search Results

    TRANSISTOR 9024 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9024 Datasheets Context Search

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    transistor Common Base configuration

    Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth


    Original     		PDF IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1012S800 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 MHz.


    Original     		PDF IB1012S800 IB1012S800 IB1012S800-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M70 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M70 IB1011M70 IB1011M70-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of


    Original     		PDF IB1214M375 IB1214M375 IB1214M375-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M20 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M20 IB1011M20 IB1011M20-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M32 IB1214M32 IB1214M32-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating


    Original     		PDF IB1214M150 IB1214M150 IB1214M150-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2226M160 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating


    Original     		PDF IB2226M160 IB2226M160 IB2226M2160 IB2226M160-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011S350 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating


    Original     		PDF IB1011S350 IB1011S350 1090MHz. D1977-2 IB1011S350-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating


    Original     		PDF IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A

    D1790

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating


    Original     		PDF IB1011S70 IB1011S70 1090MHz. IB1011S70- D1790

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of


    Original     		PDF IB0912L200 IB0912L200 IB0912L200-REV-NC-DS-REV-C bd 142 transistor

    D1788

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating


    Original     		PDF IB1011S250 IB1011S250 1090MHz. IB1011S250-REV-NC-DS-REV-A D1788

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over


    Original     		PDF IB2731MH110 IB2731MH110 IB2731MH110-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2856S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT Pulsed Medical Transistor Class C Operation − High Efficiency The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base


    Original     		PDF IB2856S250 IB2856S250 IB2856S250-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the


    Original     		PDF IB3135MH65 IB3135MH65 IB3135MH65-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the


    Original     		PDF IB3135MH75 IB3135MH75 IB3135MH75-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB450S500 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT UHF Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating


    Original     		PDF IB450S500 IB450S500 IB450S500-REV-NC-DS-REV-C

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2931MH55 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the


    Original     		PDF IB2931MH55 IB2931MH55 IB2931MH55-REV-NC-DS-REV-NC

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous


    Original     		PDF IB0810M12 IB0810M12 IB0810M12-REV-NC-DS-REV-A bd 142 transistor

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M6 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M6 IB1214M6 IB1214M6-REV-PR1-DS-REV-B

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF