9275 transistor
Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.
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MPSA42
9275 transistor
transistor k 208
MPSA42
MPSA42 multicomp
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MPSA42
Abstract: No abstract text available
Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.
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MPSA42
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Transistor C G 774 6-1
Abstract: transistor 2N4033 2N4033
Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53
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2N4033
Transistor C G 774 6-1
transistor 2N4033
2N4033
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistor
Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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npn 9016 transistor
Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2N3442
Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage
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2N3442
2N3442
transistor 2n3442
npn 9016 transistor
transistor 9016 npn
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IN5817 schottky diode symbol
Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small
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TC120
600mA
300kHz
TC120503EHA
TC120
system420
D-81739
DS21365B-page
IN5817 schottky diode symbol
1N5817
595D
IN5817
MA737
TC120303EHA
TC120333EHA
TC120503EHA
equivalent components for transistor 2N2222
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pin configuration transistor 2N2222A
Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
Text: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.
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2N2222A
pin configuration transistor 2N2222A
NPN transistor 2n2222A
2N2222A 0612
2N2222A
IC 358
of 2N2222A
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transistor 7333
Abstract: BU426A
Text: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.
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BU426A
BU426A
BU426A.
transistor 7333
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BUW12A
Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
Text: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.
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BUW12A
BUW12A.
BUW12A
transistor 1000V 6A
F 9016 transistor
NPN Transistor VCEO 1000V
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high power transistor
Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.
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2N3772
high power transistor
transistor 7333
Transistor 358 to3
2N3772
transistor 928
2N3772 APPLICATIONS
transistor 358 to-3
358 transistor
2N3772A
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SS TRANSISTOR
Abstract: No abstract text available
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small
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TC120
600mA
300kHz
TC120503EHA
TC120303EHA
D-81739
DS21365B-page
SS TRANSISTOR
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power switching 10 amp 60V
Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).
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MJ10012
power switching 10 amp 60V
MJ10012
MJ1001
8805 VOLTAGE REGULATOR
100 amp npn darlington power transistors
NPN DARLINGTON 10A 400V
npn darlington transistor 150 watts
MJ-10012
npn darlington transistor 200 watts
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transistor for horizontal deflection output
Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor
Text: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.
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BU406
transistor for horizontal deflection output
NPN Transistor 50A 400V
32 TV power transistor
BU406
transistor BU406
358 transistor
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MPSA44
Abstract: ptc c 995 MA 2810
Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN epitaxial planar silicon transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
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MPSA44
MPSA44
ptc c 995
MA 2810
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npn darlington transistor 200 watts
Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806
Text: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.
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BU806
npn darlington transistor 200 watts
transistor 7333
bu806 equivalent
1462, TRANSISTOR
BU806
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pin configuration pnp transistor mpsa92
Abstract: mpsa92 MPSA42 9016 transistor
Text: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
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MPSA92
MPSA42.
pin configuration pnp transistor mpsa92
mpsa92
MPSA42
9016 transistor
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MJ4502
Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
Text: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.
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MJ4502
750mA.
MJ4502
MJ4502 EQUIVALENT
transistor mj4502
A3105
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MPSA44
Abstract: 9016 transistor
Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low
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MPSA44
9016 transistor
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diode st 4148
Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)
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MMBT8050LT1
OT-23)
-LL4001-LL4007
-LL4148
1N4001-1N4007
diode st 4148
ST 4148
LL4148 st
8050 sot-23
st 8050
9016 transistor
9014 SOT 23
4148 st
TRANSISTOR 4148
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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