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    TRANSISTOR 841 Search Results

    TRANSISTOR 841 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 841 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor


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    PDF M3D088 PBR951 SCA60 125104/1200/05/pp16

    transistor equivalent book FOR D 1047

    Abstract: marking code w2 sot23 TRANSISTOR C 2577 MJC diode SOT23 SOT23 NE PBR951 9016 transistor specification transistor 1002 6f BF 234 transistor transistor ZO 103 MA
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor


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    PDF M3D088 PBR951 app31 SCA60 125104/1200/05/pp16 transistor equivalent book FOR D 1047 marking code w2 sot23 TRANSISTOR C 2577 MJC diode SOT23 SOT23 NE PBR951 9016 transistor specification transistor 1002 6f BF 234 transistor transistor ZO 103 MA

    transistor equivalent book FOR D 1047

    Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor


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    PDF M3D088 PBR951 PBR951 SCA60 125104/1200/05/pp16 771-PBR951-T/R transistor equivalent book FOR D 1047 MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D102 PRF957 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF957 FEATURES PINNING • Small size PIN


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    PDF M3D102 PRF957 OT323 125006/03/pp16

    transistor equivalent book FOR D 1047

    Abstract: TR zo 103 ma PRF957 d 1047 transistor MGS513 marking 28 SOT323 uhf transistor equivalent 1047
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PRF957 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF957 FEATURES PINNING • Small size


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    PDF M3D102 PRF957 OT323 125006/03/pp16 transistor equivalent book FOR D 1047 TR zo 103 ma PRF957 d 1047 transistor MGS513 marking 28 SOT323 uhf transistor equivalent 1047

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


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    PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    2SC5289

    Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.


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    PDF 2SC5289 2SC5289 2SC5192 2SC5288 2SC5289-T1 83942

    NEC 3358

    Abstract: 3543 5995 MARKING T90 2SC5289 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.


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    PDF 2SC5289 2SC5289 NEC 3358 3543 5995 MARKING T90 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504

    ic sc 4145

    Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
    Text: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.


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    PDF NE69039 NE69039 ic sc 4145 62629 ic 3524 datasheet NE68939 NE69039-T1 nec 8339

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    BUK555-100A

    Abstract: transistor c 839 BUK555 transistor M 839
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    PDF BUK555-100A/B BUK555 -100A -100B BUK555-100A/B BUK555-100A transistor c 839 BUK555 transistor M 839

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


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    PDF BUK562-100A SQT404

    BLW 82

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


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    PDF bb53T31 BLW 82

    TRANSISTOR S 838

    Abstract: 600 V logic level fet
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


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    PDF BUK562-100A SQT404 BUK562-100A TRANSISTOR S 838 600 V logic level fet

    sot-23 Marking LG

    Abstract: No abstract text available
    Text: Central" CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z


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    PDF CMPTA44 OT-23 CP310 26-September OT-23 sot-23 Marking LG

    CZTA44

    Abstract: A 671 transistor
    Text: Central" CZTA44 Semiconductor Corp. NPN SILICON, EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: FULL PART NUMBER


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    PDF CZTA44 OT-223 CP310 26-September OT-223 A 671 transistor

    EN60065

    Abstract: TOSHIBA VDE DIODE S4 58A DIODE S4 62a UL1577 TLP421 TLP421F DIN-VDE0884 TOSHIBA TUV VDE0884
    Text: TO SH IBA TLP421F TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421F HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421F consists of a silicone photo-transistor


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    PDF TLP421F TLP421 TLP421F UL1577 VDE0884 R9950202 VDE0884 EN60065 TOSHIBA VDE DIODE S4 58A DIODE S4 62a UL1577 DIN-VDE0884 TOSHIBA TUV

    TLP421GB

    Abstract: TLP421 11-5B2 VDE0884 EN60065EN60950
    Text: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor


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    PDF TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603 TLP421GB 11-5B2 VDE0884 EN60065EN60950

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TLP421F

    Abstract: TOSHIBA TUV TLP421 VDE0884 Photocoupler TUV
    Text: TO SH IBA TLP421F TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421F HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421F consists of a silicone photo-transistor


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    PDF TLP421F TLP421 TLP421F UL1577 TOSHIBA TUV VDE0884 Photocoupler TUV

    TLP421

    Abstract: TOSHIBA TUV 11-5B2 VDE0884 TLP421-2
    Text: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor


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    PDF TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603hen TOSHIBA TUV 11-5B2 VDE0884 TLP421-2

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    B 1566 Transistor

    Abstract: EW 9016 Transistor B 1566
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor


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    PDF PBR951 PBR951 125104/1200/05/pp16 B 1566 Transistor EW 9016 Transistor B 1566