DTC114TE
Abstract: SMD310 motorola DTC114TE
Text: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114TE/D
DTC114TE
416/SC
DTC114TE/D*
DTC114TE
SMD310
motorola DTC114TE
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DTC114YE
Abstract: SMD310 motorola DTC114YE
Text: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114YE/D
DTC114YE
416/SC
DTC114YE/D*
DTC114YE
SMD310
motorola DTC114YE
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DTA143EE
Abstract: SMD310 43 DTA143EE
Text: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE/D
DTA143EE
416/SC
DTA143EE/D*
DTA143EE
SMD310
43 DTA143EE
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DTA114YE
Abstract: SMD310
Text: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE/D
DTA114YE
416/SC
DTA114YE/D*
DTA114YE
SMD310
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MC3356P
Abstract: motorola transistor array 14 pin dip MC3346 all ic data Motorola ic DATA BOOK MC3346D transistor 102 ARRAY TRANSISTOR 8 Motorola fe suffix
Text: Order this document by MC3346/D MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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MC3346/D
MC3346
MC3346
MC3346/D*
MC3356P
motorola transistor array 14 pin dip
all ic data
Motorola ic DATA BOOK
MC3346D
transistor 102
ARRAY TRANSISTOR 8
Motorola fe suffix
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Untitled
Abstract: No abstract text available
Text: Order this document by MC3346/D MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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MC3346/D
MC3346
MC3346
MC3346/D*
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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TRANSISTOR T 927
Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to
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Shoulder66
T-13/4
TRANSISTOR T 927
965 transistor
transistor D 4515
transistor t13
transistor b 1655
0280 218 065
ASTM-D-4066
a 933 transistor
ASTM-D4066
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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2SA1784
Abstract: 2SA1781
Text: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .
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EN3520
2SA1784/2SC4644
VCEO400V)
2SA17814/2SC4644]
2SA1784
2SA1784
2SA1781
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MJF18008 equivalent
Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES
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MJE18008/D*
MJE18008/D
MJF18008 equivalent
MJF18008
MPF930
MTP8P10
MUR105
221D
MJE18008
MJE210
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vce 1200 and 5 amps npn transistor to 220 pack
Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES
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E69369
MJE18004/D*
MJE18004/D
vce 1200 and 5 amps npn transistor to 220 pack
221D
MJE18004
MJE210
MJF18004
MPF930
MTP8P10
MUR105
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221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES
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MJE18006/D*
MJE18006/D
221D
MJE18006
MJE210
MJF18006
MPF930
MTP8P10
MUR105
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221D
Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES
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MJE18008/D*
MJE18008/D
221D
MJE18008
MJE210
MJF18008
MPF930
MTP8P10
MUR105
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BC337 figure
Abstract: BU323A npn darlington transistor 150 watts 1N4001 BC337
Text: MOTOROLA Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR
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BU323A/D*
BU323A/D
BC337 figure
BU323A
npn darlington transistor 150 watts
1N4001
BC337
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2N2222A plastic package
Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
Text: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most
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14-pin
TPQ2222A
TPQ3904
TPQ2907A
TPQ3906
TPQ6502
2N2222
2N2907
2N2907A
2N3904
2N2222A plastic package
transistor 2n2222A plastic package
NPN transistor 2n2222A plastic package
2n2222a plastic
tpq3904
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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BLW84
Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith
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bbS3S31
BLW84
59-j54
OT-123.
7Z77529
7Z77S30
BLW84
transistor tt 2222
C 829 transistor
TT 2222 npn
TT 2222
SOT123
C 828 Transistor
transistor L6
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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