Untitled
Abstract: No abstract text available
Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol
|
Original
|
MMBT2131T1
MMBT2132T1/T3)
AN569)
|
PDF
|
2SC5289
Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
|
Original
|
2SC5289
2SC5289
2SC5192
2SC5288
2SC5289-T1
83942
|
PDF
|
NEC 3358
Abstract: 3543 5995 MARKING T90 2SC5289 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
|
Original
|
2SC5289
2SC5289
NEC 3358
3543
5995
MARKING T90
nec k 813
2SC5192
2SC5288
2SC5289-T1
U 1504
|
PDF
|
ic sc 4145
Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Text: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
|
Original
|
NE69039
NE69039
ic sc 4145
62629
ic 3524 datasheet
NE68939
NE69039-T1
nec 8339
|
PDF
|
NEC NF 932
Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride
|
Original
|
2SC5009
2SC5009
NEC NF 932
ZO 103 MA 75 623
2SC5009-T1
TD-2430
power transistor 3055
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
|
OCR Scan
|
2SC5009
2SC5009
ZO 107 MA
341S
|
PDF
|
TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
|
OCR Scan
|
2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
|
PDF
|
Untitled
Abstract: No abstract text available
Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
|
OCR Scan
|
BLX93A
tbS3T31
|
PDF
|
BLW84
Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith
|
OCR Scan
|
bbS3S31
BLW84
59-j54
OT-123.
7Z77529
7Z77S30
BLW84
transistor tt 2222
C 829 transistor
TT 2222 npn
TT 2222
SOT123
C 828 Transistor
transistor L6
|
PDF
|
S10080
Abstract: TJT-120
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
BUK556-60H
T0220AB
BUK556-60H
S10080
TJT-120
|
PDF
|
C 828 Transistor
Abstract: buk553 BUK553-100A
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
BUK553-100A/B
BUK553
-100A
-100B
T0220AB
553-100A/B
C 828 Transistor
BUK553-100A
|
PDF
|
K83 Package
Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —
|
OCR Scan
|
MPQ1050
O-116
30Vdc
500mAdc,
50mAdc)
MPQ2221
MPQ2222
MHQ2221
K83 Package
MPQ1050
transistor k84
MPQ2221
MPQ105
|
PDF
|
|
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
|
PDF
|
C 828 Transistor
Abstract: marking code 20A iC 828 Transistor LB1200
Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac tured by the epitaxial planar process, epoxy mold ed in a surface mount package, designed for
|
OCR Scan
|
CZT5338
OT-223
CP219
26-September
OT-223
C 828 Transistor
marking code 20A
iC 828 Transistor
LB1200
|
PDF
|
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .
|
OCR Scan
|
MAT-03
DAC-08,
992mA
992rnA,
008mA
|
PDF
|
C 828 Transistor
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP
|
OCR Scan
|
Emitter-Ba01
C 828 Transistor
|
PDF
|
1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
|
OCR Scan
|
2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
|
PDF
|
TEA2262
Abstract: No abstract text available
Text: r = 7 SGS-THOMSON liìiflDÈ[S [l[Li gTFK©liì!lD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI
|
OCR Scan
|
TEA2262
TEA2262
|
PDF
|
TEA2262
Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
Text: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI TATION DOUBLE PULSE SUPPRESSION
|
OCR Scan
|
TEA2262
TEA2262
SMPS Transformer Symbol
circuit diagram of high power smps
SMPS Transformer 12V
mos power 823
TEA5170
smps circuit diagrams
MASTER-SLAVE SMPS FOR TV
hf amplifier for transformer
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Æ T S G S -T tfO M S O N RiôD g (Q [l[L[lgïï[S(o)RgD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI
|
OCR Scan
|
TEA2262
DIP16
TEA2262
7T2T237
0D5fiT53
|
PDF
|
