80846
Abstract: 022241 gummel
Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143
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OT-143
Q62702-F1611
900MHz
Dec-11-1996
80846
022241
gummel
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BC519
Abstract: 81a diode
Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06N
IPP070N06N
IPI070N06N
BC519
81a diode
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Diode Marking C.3
Abstract: da5 diode DA5 marking 5411C
Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06L
IPP070N06L
Diode Marking C.3
da5 diode
DA5 marking
5411C
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da5 diode
Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C
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IPP048N06L
IPB048N06L
da5 diode
BC519
DA QG
marking 1bc
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DA5 diode
Abstract: No abstract text available
Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C
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IPB110N06L
IPP110N06L
DA5 diode
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5411C
Abstract: da5 diode BC519 58a4
Text: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J /&/ Y" 0( 6 P S ? @5A1C 9>7 C
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IPB080N06N
IPP080N06N
5411C
da5 diode
BC519
58a4
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DA QG
Abstract: No abstract text available
Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R , ? >=1G .&- Y" I9 0( 6 P S ? @5A1C 9>7 C 5=@5A1C
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IPB065N06L
IPP065N06L
DA QG
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IPB085N06L
Abstract: da5 diode marking 4rt IPB085N06L G
Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J 0&* Y" 0( 6 P S ? @5A1C
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IPB085N06L
IPP085N06L
da5 diode
marking 4rt
IPB085N06L G
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BFQ 325
Abstract: bfq 85 marking GMA BFQ 58
Text: BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1049
Dec-12-1996
BFQ 325
bfq 85
marking GMA
BFQ 58
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temic 0675
Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Text: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23
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D-74025
temic 0675
MARKING ra
BFQ 540 application
Telefunken 2360
telefunken ra 100
BFQ 244
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D17L01 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS ON (m Ω) Max ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 81 @ VGS=10V
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STU/D17L01
-100V
252AA(
O-252
O-252
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transistor c 933
Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
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PHl819-33
Tl50M50A
AlC100A
transistor c 933
transistor j5
Transistor 933
13MM
transistor c 144
572 transistor
933 TRANSISTOR
30 w RF POWER TRANSISTOR NPN
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Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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transistor 9163
Abstract: lN914B lN914 PH1617-2 BIPOLAR M 846 m 32 ab transistor transistor 1555
Text: Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 2W PH1617-2 v2.00 Features l l l l l l Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching
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PH1617-2
-55to
transistor 9163
lN914B
lN914
PH1617-2
BIPOLAR M 846
m 32 ab transistor
transistor 1555
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Transistor 2SA 2SB 2SC 2SD
Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81
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2SA673
2SA778
BB101C
BB301M
BB301C
Transistor 2SA 2SB 2SC 2SD
993 395 pnp npn
transistor 2SA 101
TRANSISTOR 2SC 635
transistor 2Sb 474
transistor 2SC458
transistor 2sc2512
transistor 2sk 168
transistor 2SD 1153
3SK228
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs
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OCR Scan
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Q62702-F1611
OT-143
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1049
OT-23
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611
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Q62702-F1611
OT-143
0535bOS
900MHz
fl235b05
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Untitled
Abstract: No abstract text available
Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.
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823b32Q
62702-F1049
OT-23
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75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
Text: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT
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30-06A7
30-06A7T
50-06A7
50-06A7T
75-06A7
75-06A7T
15-12A7
25-12A7
50-12E7
100-06A8
Bt 35 transistor
transistor 81 110 w 85
100-12E8
MWI 15-12A7
25-12A7T
transistor T 044
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st ae gp 446
Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Text: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!
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OT-23
st ae gp 446
AE GP 532
AE GP 531
ae gp 447
592/diode gp 421
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0733
Abstract: No abstract text available
Text: BFP 81 NPN Silicon RF Transistor • For low -noise am plifiers up to 2 G H z at collector currents from 0.5 to 25 mA. E C E C C -ty p e in preparation: C E C C 50002/. E E S D : E lectro static d isch arg e sensitive device, observe handling precautions!
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T-143
0733
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TRANSISTOR 3FT 81
Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163
Text: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration
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PH1617-2
TRANSISTOR 3FT 81
T20 64 diode
transistor 81 110 w 63
transistor 9163
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LC1 F150
Abstract: d 1711
Text: m a n A M P com pany Wireless Bipolar Power Transistor, 10W 1.45-1.60 GHz PH1516-10 Features • • • • • • Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point
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PH1516-10
LC1 F150
d 1711
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