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    TRANSISTOR 81 120 W 63 Search Results

    TRANSISTOR 81 120 W 63 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 81 120 W 63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original     		PDF EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    FL 1173

    Abstract: Transistor A 1776 PH1516-10
    Text: =_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz 1OW PHl516-10 v2.00 Features l l l l l l IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point


    Original     		PDF PHl516-10 t13Mn, FL 1173 Transistor A 1776 PH1516-10

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    TRANSISTOR 185 846

    Abstract: 1N914B PH1819-2
    Text: =-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 2W PH1819-2 Features Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration


    Original     		PDF PH1819-2 TRANSISTOR 185 846 1N914B PH1819-2

    Untitled

    Abstract: No abstract text available
    Text: PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 TO-220AB


    Original     		PDF PHP20N06T; PHB20N06T PHP20N06T O-220AB) PHB20N06T OT404 OT404,

    Ex-92

    Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 0/PTB Ex-92.C.2141
    Text: Level and Pressure Product Information Vibrating level switches Contents Contents 1 Product description 1.1 1.2 2 Function and application 2.1 2.2 3 Vibrating level switches overview . 7


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    SmD TRANSISTOR a42

    Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 SNA10A TRANSISTOR BC 413 MO-220-WGGD-2 pdf on BC 187 TRANSISTOR MO-220-WKKD-2
    Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages


    Original     		PDF

    NE24318

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


    OCR Scan     		PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318

    A1727 transistor

    Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V


    OCR Scan     		PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 C1000 A1727 transistor transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63

    A1727

    Abstract: A1727 transistor
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for


    OCR Scan     		PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 A1727 transistor

    npn UHF transistor to-33

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 » -56 dBc, IM3 = -64 dBc KE24620 IM2 - -63 dBc, IMS » -72 dBc @ Vo - 120 dB i v/75 Q The NE246 is an NPN transistor designed lor broadband


    OCR Scan     		PDF NE24615 KE24620 NE24600 NE24615 NE246 npn UHF transistor to-33

    Untitled

    Abstract: No abstract text available
    Text: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF DU2860T 4-40pF 9-180pF DU2860T

    2sc2952

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband


    OCR Scan     		PDF NE24615 NE24620 iV/75 NE24600 NE24615 NE246 lS22l2, 4275c! 2sc2952

    LC1 F150

    Abstract: d 1711
    Text: m a n A M P com pany Wireless Bipolar Power Transistor, 10W 1.45-1.60 GHz PH1516-10 Features • • • • • • Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point


    OCR Scan     		PDF PH1516-10 LC1 F150 d 1711

    PH1516-30

    Abstract: b 595 transistor PH1516
    Text: a n A M P com pany Wireless Bipolar Power Transistor, 30W 1.45-1.60 GHz PH1516-30 V2.00 Features • • • • • D esigned for C ellu lar Base S tation A pplications -30 dBc Typical 3rd 1MD at 30 W atts PEP C o m m o n E m itter Class AB O p e ra tio n


    OCR Scan     		PDF PH1516-30 PH1516-30 b 595 transistor PH1516

    1445s

    Abstract: transistor D 1761 PH1617
    Text: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point


    OCR Scan     		PDF PH1617-10 1445s transistor D 1761 PH1617

    IU 1047

    Abstract: transistor 1005 oj
    Text: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point


    OCR Scan     		PDF PH1819-2 IU 1047 transistor 1005 oj

    TH 2190 Transistor

    Abstract: BSV62 BSY62 TRANSISTOR K 2191 BSV18 BSY17 BSY18 BSY63 Q60218-Y17 Q60218-Y18
    Text: 2SC » • ÖS3SbDS 0QG4fl24 3 « S I E G j NPN Transistors for Switching Applications n -SIEMENS AKTIENGESELLSCHAF . B S Y17 BSY 18 BSY62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected


    OCR Scan     		PDF 00G4fl24 BSY62 Q60218-Y17 Q60218-Y18 Q60218-Y62-A Q60218-Y62-B Q60218-Y63 Coll4830 QT-35- BSY18 TH 2190 Transistor BSV62 BSY62 TRANSISTOR K 2191 BSV18 BSY17 BSY63 Q60218-Y17 Q60218-Y18

    PH1516-2

    Abstract: LT 1146 d 1047 transistor Cbc 183 cl PH1516
    Text: /M Îh C m a n A M P com pany Wireless Bipolar Power Transistor, 2W 1.45 -1.60 GHz PH1516-2 Features • • • • • • D e s ig n e d f o r C e llu la r B ase S ta tio n A p p lic a tio n s C lass AB: -33 d B c T yp 3 rd IM I a t 2 W atts PEP C lass A; +4-4 d B m I'yp 3 rd O r d e r I n te r c e p t P o in t


    OCR Scan     		PDF PH1516-2 PH1516-2 LT 1146 d 1047 transistor Cbc 183 cl PH1516

    Untitled

    Abstract: No abstract text available
    Text: m an A M P com pany 1 RF MOSFET Power Transistor, 120W, 28V DU28120U 2 -1 7 5 MHz Features • • • • • N -C hannel E n h an cem en t M od e D evice DM OS Stru ctu re L o w er C ap acitan ces fo r B ro ad b an d O p eratio n H igh Satu rated O utput P o w er


    OCR Scan     		PDF DU28120U 5-80pF 4-40pF 9-180pF 500pF

    NE243187

    Abstract: NE243188
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499