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    TRANSISTOR 808 Search Results

    TRANSISTOR 808 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 808 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC 2905

    Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
    Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC PDF

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2 PDF

    c 1685 transistor

    Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
    Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors


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    PH1617-60 PH1617-60 1615MHz 1685MHz c 1685 transistor 1685 transistor transistor c 1685 1615mhz PDF

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


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    MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335 PDF

    8080-1G

    Abstract: 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 TO-3 Power Transistor Sockets 8080-1G Series 8080-1G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8080-1G family of TO-3 Power Transistor Sockets is used for both


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    8080-1G 8080-1G7 8080-1G44 8080-1G9 8080-1G25 8080-1G44 8080-1G36 8080-1G37 8080-1G38 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39 PDF

    Radar

    Abstract: PH1214-12M radar 77 ghz
    Text: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration


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    PH1214-12M PH1214-12M pul2266, Radar radar 77 ghz PDF

    PH1214-40M

    Abstract: Radar
    Text: Radar Pulsed Power Transistor 40 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-40M PH1214-40M Radar Pulsed Power Transistor - 40 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1214-40M PH1214-40M Radar PDF

    TRANSISTOR 1300

    Abstract: J1 TRANSISTOR Radar PH1113-100 100 amp power transistor
    Text: Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1113-100 PH1113-100 TRANSISTOR 1300 J1 TRANSISTOR Radar 100 amp power transistor PDF

    J33 TRANSISTOR

    Abstract: PH1214-110M Radar
    Text: Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1214-110M PH1214-110M J33 TRANSISTOR Radar PDF

    pin configuration of ic 8088

    Abstract: PH1090-350L
    Text: Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-350L PH1090-350L Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1090-350L PH1090-350L pin configuration of ic 8088 PDF

    3 pin transistor 10 amp

    Abstract: Radar TRANSISTOR J13 5 pin transistor 3 amp PH1214-80M power transistor 13 w 12 transistor
    Text: Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1214-80M PH1214-80M 3 pin transistor 10 amp Radar TRANSISTOR J13 5 pin transistor 3 amp power transistor 13 w 12 transistor PDF

    RADAR

    Abstract: PH1214-25M transistor 25 4 ghz transistor
    Text: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1214-25M PH1214-25M RADAR transistor 25 4 ghz transistor PDF

    PH1214-220M

    Abstract: Radar transistor 220
    Text: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1214-220M PH1214-220M Radar transistor 220 PDF

    pin26

    Abstract: J22 transistor PH1090-175L
    Text: Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-175L PH1090-175L Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1090-175L pin26 J22 transistor PH1090-175L PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor PDF

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624 PDF

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 transistor NEC D 822 P PDF

    Philips polystyrene capacitor

    Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
    Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear


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    OT121B. BLW76 MGP517 Philips polystyrene capacitor ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    TRANSISTOR 1G

    Abstract: No abstract text available
    Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,


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    8080-1G 8080-1G44 MIL-STD-202, TRANSISTOR 1G PDF

    BU808

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems.


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    T-33-T5 T-33-75 7Z81799 BU808 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


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    BUK545-100A/B BUK545 -100A -100B PDF

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


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    2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P PDF