MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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N5027
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION
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N5027
O-220
O-220F
N5027L
N5027-x-TA3-T
N5027L-x-TA3-T
N5027-x-TF3-T
N5027L-x-TF3-T
N5027
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N5027
Abstract: transistor 800V 1A
Text: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION
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N5027
O-220
O-220F
N5027L
N5027-x-TA3-F-T
N5027L-x-TA3-F-T
N5027-x-TF3-F-T
N5027L-x-TF3-F-T
N5027
transistor 800V 1A
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2SC4518
Abstract: 2SC4518A FM20
Text: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE
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2SC4518/4518A
100max
O220F)
2SC4518
2SC4518A
550min
Pulse10)
50typ
2SC4518A
FM20
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NTE369
Abstract: Transistor 800V
Text: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA
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NTE369
NTE369
200mA
200mA,
500mA,
100mA,
Transistor 800V
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2sc3149
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications
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2SC3149
2SC3149
2SC3149L-T60-K
2SC3149G-T60-K
O-126
2SC3149L-T60-K
O-126
QW-R204-024
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transistor ic1A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications.
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5302D
5302D
5302DL
5302DG
5302D-TM3-T
5302DL-TM3-T
5302DG-TM3-T
O-251
QW-R213-018.
transistor ic1A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES
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5302D
5302D
OT-223
5302DG-AA3-R
5302DL-T60-K
5302DG-T60-K
O-126
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
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2SC4301
Abstract: No abstract text available
Text: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)
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2SC4301
FM100
100max
800min
Pulse14)
105typ
2SC4301
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2SC4301
Abstract: No abstract text available
Text: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)
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2SC4301
FM100
100max
800min
Pulse14)
105typ
2SC4301
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES
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5302D
5302D
5302DL-AA3-R
5302DG-AA3-R
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
5302DG-T92-K
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. 1 TO-251 FEATURES * Makes efficient anti-saturation operation
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O-251
5302L-TM3-T
5302G-TM3-T
QW-R213-020
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES
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5302D
O-251
5302D
O-252
O-126
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
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5302D
Abstract: 5302DL
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES
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5302D
O-251
5302D
O-126
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
5302DG-T92-K
5302DL
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode
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5302D
5302D
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
5302DG-T92-K
5302DL-T92-R
5302DG-T92-R
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TO220 HEATSINK DATASHEET
Abstract: 2SC5239 ATV3 transistor 800V 1A
Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2
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2SC5239
MT-25
100max
550min
300mA
TO220 HEATSINK DATASHEET
2SC5239
ATV3
transistor 800V 1A
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Untitled
Abstract: No abstract text available
Text: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2
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2SC4908
100max
800min
40typ
O220F)
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2SC4908
Abstract: FM20
Text: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2
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2SC4908
100max
800min
40typ
O220F)
2SC4908
FM20
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2SC4517
Abstract: 4517A transistor 800V 1A 2sc4517a
Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2
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2SC4517/4517A
2SC4517
2SC4517A
O220F)
100max
550min
35typ
4517A
transistor 800V 1A
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2SC4299
Abstract: No abstract text available
Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max
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2SC4299
FM100
100max
800min
50typ
2SC4299
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Untitled
Abstract: No abstract text available
Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 3.5 A VCE(sat) IC=3A, IB=0.6A
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2SC3680
Pulse14)
100max
800min
105typ
MT-100
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4517A
Abstract: 2sc4517 2SC4517A FM20
Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat)
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2SC4517/4517A
100max
550min
O220F)
35typ
300mA
2SC4517
2SC4517A
4517A
2SC4517A
FM20
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2SC3927
Abstract: DSA0016508
Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC
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2SC3927
MT-100
100max
550min
Pulse15)
105typ
2SC3927
DSA0016508
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