Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 737 Search Results

    TRANSISTOR 737 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 737 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9275 transistor

    Abstract: transistor k 208 MPSA42 MPSA42 multicomp
    Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.


    Original     		PDF MPSA42 9275 transistor transistor k 208 MPSA42 MPSA42 multicomp

    MPSA42

    Abstract: No abstract text available
    Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.


    Original     		PDF MPSA42 MPSA42

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


    Original     		PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    24 TRANSISTOR MAKING

    Abstract: LM195 LM295 C1995 LM395 LP395 LP395Z Z03A Ice-100
    Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection This very high gain transistor has included on the chip current limiting power limiting and thermal overload protection making it difficult to destroy from


    Original     		PDF LP395 24 TRANSISTOR MAKING LM195 LM295 C1995 LM395 LP395Z Z03A Ice-100

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607

    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582

    TRANSISTOR T 927

    Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
    Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to


    Original     		PDF Shoulder66 T-13/4 TRANSISTOR T 927 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		PDF 2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399

    TD2400

    Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		PDF 2SC5007 2SC5007 TD2400 transistor zo 607 2SC5007-T1 NEC 1555 AK-804 164-1-1

    nec 2401 831

    Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and


    Original     		PDF 2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor

    2N3442

    Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
    Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage


    Original     		PDF 2N3442 2N3442 transistor 2n3442 npn 9016 transistor transistor 9016 npn

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C nsforFigs16and17:

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    PINNING-SOT186

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF BUK543-60A/B BUK543 PINNING-SOT186 DESCRIPT-60A/B 100-i PINNING-SOT186

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF BUK543-60A/B BUK543 -SOT186

    Philips film capacitors 27 pf

    Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
    Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C 00b35b2 7Z772S6 7Z77255 Philips film capacitors 27 pf trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    OCR Scan     		PDF 2SC5006 2SC5006

    Untitled

    Abstract: No abstract text available
    Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLY92C

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568