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    TRANSISTOR 7135A Search Results

    TRANSISTOR 7135A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 7135A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7133A

    Abstract: 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A
    Text: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency


    Original     		PDF CCD30 CCD30-11 CCD30-11, 7133A 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A

    CCD30-11

    Abstract: 7133A S11071 CCD30 M-2011 tdi ccd E2V transistor 7133A
    Text: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency


    Original     		PDF CCD30 CCD30-11 7133A S11071 M-2011 tdi ccd E2V transistor 7133A

    tdi ccd E2V

    Abstract: e2v ccd tdi ccd ccd tdi binning CCD30-11 7133A Scientific Imaging Technologies TDI ccd sensor
    Text: CCD30-11 Deep Depletion Sensor High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Deep Depletion for Enhanced Infrared Sensitivity * Symmetrical Anti-static Gate Protection * Anti-blooming Readout Register


    Original     		PDF CCD30-11 CCD3011, tdi ccd E2V e2v ccd tdi ccd ccd tdi binning 7133A Scientific Imaging Technologies TDI ccd sensor