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    TRANSISTOR 6J U Search Results

    TRANSISTOR 6J U Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6J U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN4989FE

    LDTA143EWT1G

    Abstract: transistor 6j PNP marking 6J
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143EWT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF LDTA143EWT1G LDTA143EWT1G transistor 6j PNP marking 6J

    Untitled

    Abstract: No abstract text available
    Text: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER


    Original     		PDF 2SA1182LT1 OT-23

    RN4989FE

    Abstract: No abstract text available
    Text: RN4989FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN4989FE 000707EAA1 RN4989FE

    Untitled

    Abstract: No abstract text available
    Text: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN4989FE

    RN4989FE

    Abstract: No abstract text available
    Text: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN4989FE RN4989FE

    DTA114TET1

    Abstract: DTA115EET1
    Text: DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF DTA114EET1 SC-75/SOT-416 DTA114TET1 DTA115EET1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LDTA143EET1 SC-89

    Untitled

    Abstract: No abstract text available
    Text: MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 DTA143E/D

    transistor 6J U

    Abstract: No abstract text available
    Text: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G


    OCR Scan     		PDF RC4193 RM4193, RC4193 transistor 6J U

    Untitled

    Abstract: No abstract text available
    Text: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient


    OCR Scan     		PDF 44475A4 001DbT3

    2n5882 motorola

    Abstract: 2NS882
    Text: MOTOROLA Order this document by 2M5882/D SEM ICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general-purpose power amplifier and switching applications. • Collector-Emitter Sustaining Voltage —


    OCR Scan     		PDF 2M5882/D 2N5882/D 2n5882 motorola 2NS882

    powertech

    Abstract: No abstract text available
    Text: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A


    OCR Scan     		PDF PB-500 18WIRE powertech

    pa80c

    Abstract: nec mpa80c MPA80C UPA80C J2268 mpa-80 UPA80C equivalent
    Text: % TC TRANSISTOR ARRAY ELECTRON D EV IC E /¿PA80C FLUORESCENT INDICATOR PANEL DRIVER PNP-NPN SILICO N EPITAXIAL TRAN SISTO R ARRAY DESCRIPTION The ;uPA80C is a monolithic array of seven PNP-NPN structured transistors. This device is especially suited for driving FIP Fluorescent Indicator Panel .


    OCR Scan     		PDF uPA80C uPA80C -50-l| juPA80C pa80c nec mpa80c MPA80C J2268 mpa-80 UPA80C equivalent

    IRF74

    Abstract: IRF742 IRF743
    Text: [F@Mm°[M © IFHF IRF742.743 8 AMPERES 400, 350 VOLTS R|DS ON = 0.80 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF742 TC-25 IRF74. IRF742-Ã IRF74 IRF743

    2sc995

    Abstract: Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology
    Text: 2 s c 995 I 2/ U L 2 s c 996 D > N P N E M Ì s il ic o n n p n t r ip l e * 7 - - r ^ ^ÿkmtatim o Color TV V ideo Output A p p l ications I B E T t , • ^ l' ? fi ; K 5 > ì; ^ 5 7 P C T 7d ì W U n i t i n mm o • 5Ì Ì^ DIFFUSED TRANSISTOR (PCT PROCESS


    OCR Scan     		PDF 2sc995 2sc996 100MHz 2SC995 Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology

    mosfet BF964

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D fc.b53131 0012156 b • u I _ a BF964: _: T-3 I-2 S' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for v.h.f. applications in television tuners, especially in r.f. stages and mixer stages in S-channel


    OCR Scan     		PDF b53131 BF964: mosfet BF964

    litton

    Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
    Text: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z


    OCR Scan     		PDF SSM42GD D-2501 I--190- D-2501 2285C litton Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG RF FET TRANSISTOR 3 GHZ VDS35 55M4S

    001D731

    Abstract: No abstract text available
    Text: What HEW LETT 1"KM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 526 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz • High Gain: 28.0 dB Typ The 526 Series is a high-power,


    OCR Scan     		PDF 44475A4 001D731

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA RN4989 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4989 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type


    OCR Scan     		PDF RN4989 47kil 22kfl

    2SK2145

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0


    OCR Scan     		PDF 2SK2145 --50V --30V 2SK2145

    L129

    Abstract: No abstract text available
    Text: MPF102 SILICO N Silicon N-channel junction field-effect transistor designed for VHF amplifier and m ixer applications. M A X IM U M R A T IN G S l*A = 2 S * C unlM S o t h e r « * ! n o t« i> Symbol Value Unit Draln-Source Voltage VDS 25 Vdc Draln-Gate Voltage


    OCR Scan     		PDF

    NDS356AP

    Abstract: No abstract text available
    Text: Ju ly 1996 N ational Semiconductor ’ NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These P -Channel logic level enhancement mode power field effect transistors are produced using Nationals, proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS356AP b501130 0Q3CI754 NDS356AP

    2N4300

    Abstract: No abstract text available
    Text: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc


    OCR Scan     		PDF 2N4300