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    TRANSISTOR 632P Search Results

    TRANSISTOR 632P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 632P Datasheets Context Search

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    transistor 632p

    Abstract: 632p
    Text: F A I R C H I L D M ICDNDUCTQ R Junel 996 tm NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC632P transistor 632p 632p

    Untitled

    Abstract: No abstract text available
    Text: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		PDF Junel996 NDC632P

    Untitled

    Abstract: No abstract text available
    Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*


    OCR Scan     		PDF FRL230 2N7275D, 2N7275R 2N7275H T0-205AF 100KRAD 300KRAD 3000KRAD 632UIS 632PH0T0