TRANSISTOR 625 Search Results

TRANSISTOR 625 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 625 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW ORDERING INFORMATION	Original	MPSA14 MPSA14 625mW MPSA14L-AB3-R MPSA14G-AB3-R MPSA14L-T92-K MPSA14G-T92-K MPSA14L-T92-B MPSA14G-T92-B OT-89	PDF
MPSA13 Abstract: PT 10000 Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	Original	MPSA13 QW-R201-016 PT 10000	PDF
MPSA13 Abstract: utc mpsa13 Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	Original	MPSA13 OT-89 QW-R208-001 utc mpsa13	PDF
MPSA13 Abstract: vbe 10v, vce 5v NPN Transistor utc mpsa13 Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	Original	MPSA13 OT-89 100ms QW-R208-001 vbe 10v, vce 5v NPN Transistor utc mpsa13	PDF
Darlington transistor Abstract: MPSA13 transistor 625 Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	Original	MPSA13 100ms QW-R201-016 Darlington transistor transistor 625	PDF
Untitled Abstract: No abstract text available Text: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	STC2907A 625mW	PDF
npn transistor 433 Mhz Abstract: S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170 Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MPSA06 Features l NPN Small Signal Transistor 625 mW NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56	Original	MPSA06 MPSA56 100mA, 100mA 100MHz npn transistor 433 Mhz S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170	PDF
STC2222 Abstract: No abstract text available Text: STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC max =625mW • Refer STC2222 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	STC2222A 625mW STC2222	PDF
MPSA14 Abstract: TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)	Original	MPSA14 QW-R201-054 TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON	PDF
equivalent mpsa14 Abstract: MPSa14 equivalent MPSA14 transistor darlington Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)	Original	MPSA14 OT-89 QW-R208-008 equivalent mpsa14 MPSa14 equivalent transistor darlington	PDF
TRANSISTOR 077 Abstract: MPSA113 MPSA11 Text: UTC MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)	Original	MPSA113 QW-R201-042 TRANSISTOR 077 MPSA11	PDF
MPSA14 Abstract: transistor 625 Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)	Original	MPSA14 OT-89 100mA 100mA 100MHz QW-R208-008 transistor 625	PDF
Untitled Abstract: No abstract text available Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 Collector-Emitter Voltage: Vces = 30V Collector Dissipation : Pc mas = 625 mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )	Original	MMBTA13 MMBTA13 OT-23 100mA 100mA 100MHz	PDF

oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
transistor marking DG Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one	Original	OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor	PDF
pin configuration transistor 2n4401 Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR Text: 2N4401 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.	Original	2N4401 2N4403 OT-23 MMBT4401. 2N4401 2N4401-BULK 2N4401-TAP D-74025 14-Oct-04 pin configuration transistor 2n4401 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR	PDF
pin configuration NPN transistor 2n3906 Abstract: 2N3906BU 2N3906 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904 Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.	Original	2N3906 2N3904 OT-23 MMBT3906. 2N3906 2N3906-BULK 2N3906-TAP D-74025 21-Oct-04 pin configuration NPN transistor 2n3906 2N3906BU 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904	PDF
pin configuration NPN transistor 2n3906 Abstract: 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3904 2N3906-BULK 2N3906-TAP MMBT3906 Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.	Original	2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK 2N3906-TAP D-74025 14-Dec-04 pin configuration NPN transistor 2n3906 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3906-TAP MMBT3906	PDF
pin configuration transistor 2n4403 Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403 Text: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.	Original	2N4403 2N4401 OT-23 MMBT4403. 2N4403-BUs D-74025 01-Sep-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 SOT-23 2N4403	PDF
pin configuration transistor 2n4403 Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4403 NPN Transistor Text: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.	Original	2N4403 2N4401 OT-23 MMBT4403. D-74025 18-Aug-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4403 NPN Transistor	PDF
SQD400AA120 Abstract: No abstract text available Text: TRANSISTOR MODULE SQD400AA120 UL;E76102 （M） SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for	Original	SQD400AA120 E76102 SQD400AA120 113max.	PDF
702 TRANSISTOR Abstract: SQD400AA100 Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for	Original	SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V 702 TRANSISTOR	PDF
pin configuration NPN transistor 2N3904 Abstract: PIN CONFIGURATION OF 2N3904 2N3904 2N3904B of 2n3904 transistor 2n3904 pin out 2n3904 application 2N3904TA 2n3904 national pin configuration pnp transistor 2n3904 Text: 2N3904 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N3906 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.	Original	2N3904 2N3906 OT-23 MMBT3904. 2N3904 2N3904-BULK 2N3904-TAP D-74025 21-Oct-04 pin configuration NPN transistor 2N3904 PIN CONFIGURATION OF 2N3904 2N3904B of 2n3904 transistor 2n3904 pin out 2n3904 application 2N3904TA 2n3904 national pin configuration pnp transistor 2n3904	PDF

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TRANSISTOR 625 Search Results

TRANSISTOR 625 Result Highlights (5)

TRANSISTOR 625 Datasheets Context Search

MN1280

Untitled

MPSA13

MPSA13

MPSA13

Darlington transistor

Untitled

npn transistor 433 Mhz

STC2222

MPSA14

equivalent mpsa14

TRANSISTOR 077

MPSA14

Untitled

oz960

transistor marking DG

pin configuration transistor 2n4401

pin configuration NPN transistor 2n3906

pin configuration NPN transistor 2n3906

pin configuration transistor 2n4403

pin configuration transistor 2n4403

SQD400AA120

702 TRANSISTOR

pin configuration NPN transistor 2N3904