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    TRANSISTOR 6108 Search Results

    TRANSISTOR 6108 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 61084 Mii SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package


    Original     		PDF 2N2222AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2222AUA

    2N2222AUA

    Abstract: "PNP Transistor"
    Text: 61084 Mii SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package


    Original     		PDF 2N2222AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2222AUA "PNP Transistor"

    transistor 45 f 122

    Abstract: No abstract text available
    Text: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available


    Original     		PDF 2N2907AUA) MIL-PRF-19500 MIL-PRF-19500. 150mA, 2N2907AUA, transistor 45 f 122

    transistor 45 f 122

    Abstract: 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8
    Text: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available


    Original     		PDF 2N2907AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2907AUA, transistor 45 f 122 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8

    2N2907AUB

    Abstract: optoelectronic ic "PNP Transistor"
    Text: 61089 Features: Applications: • • • • • • • • • Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUB) Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged


    Original     		PDF 2N2907AUB) OT-23 MIL-PRF-19500 2N2907AUB optoelectronic ic "PNP Transistor"

    2N2907AUB

    Abstract: No abstract text available
    Text: 61089 Features: Applications: • • • • • • • • • Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUB) Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged


    Original     		PDF 2N2907AUB) OT-23 MIL-PRF-19500 2N2907AUB

    CEF10N4

    Abstract: No abstract text available
    Text: CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 450V ,5.6A ,RDS ON = 700m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole.


    Original     		PDF CEF10N4 O-220F O-220F CEF10N4

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    LB 122 transistor

    Abstract: 2N2222AUA
    Text: 61084 ms- 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed


    OCR Scan     		PDF 2N2222AUA MIL-S-19500 100MHz 100kHz 150mA, 300ns, LB 122 transistor

    Untitled

    Abstract: No abstract text available
    Text: s tim m m an A M P com pany Radar Pulsed Power Transistor, 100W, 3jis Pulse, 30% Duty 1 .1 -1.3 GHz PH1113-100 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry


    OCR Scan     		PDF PH1113-100 TT5QM50A ATC100A

    Untitled

    Abstract: No abstract text available
    Text: MS- 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61083 OPTOELECTRONIC PRODUCTS DIVISION Features — Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available PIN 1 IDENTIFIER


    OCR Scan     		PDF 2N2907AUA Mil-S-19500 2N2907AUA lc-50mA, 100kHz lc-150mA, lBl-15mA VCE-10V, 150mA,

    2N2907AUB

    Abstract: No abstract text available
    Text: jim»- 2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61089 Features OPTOELECTRONIC PRODUCTS DIVISION ORIENTATION KEY Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged


    OCR Scan     		PDF 2N2907AUB OT-23 MIL-S-19500 500mA, VCE-10V, ic-50mA, 100kHz

    Untitled

    Abstract: No abstract text available
    Text: 61083 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 0.225 5.72 0.215 (5.46) Features • • • • jns*- Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available


    OCR Scan     		PDF 2N2907AUA Mil-S-19500 2N2907AUA 14ERISTICS VCE-10V, E-20V, lc-50mA, f-100kHz 100kHz 100kHz

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    VQ1001

    Abstract: No abstract text available
    Text: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7


    OCR Scan     		PDF VQ1001 VQ1001J VQ1001P 14-PIN VNDQ03

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    smp30n10

    Abstract: No abstract text available
    Text: Tem ic S ilicon * _ SMP30N10 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( S ) I d (A) 100 0.060 30 TO-220AB O DRAIN connected to TAB G D S Top View N-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF SMP30N10 O-220AB P-36853--Rev. smp30n10

    transistor tt 2247

    Abstract: No abstract text available
    Text: AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T fw l HEWLETT A"KM PACKARD Features • • • • • 85 Plastic Package Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.9 dB typical at 2.0 GHz High Associated Gain: 16.5 dB typical at 1.0 GHz


    OCR Scan     		PDF AT-60585 transistor tt 2247

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz


    OCR Scan     		PDF l4475fl4 AT-60585

    f25n06l

    Abstract: transistor marking rip RFP25N06L F25N06 transistor l 2
    Text: RFP25N06L {£} H A R R IS August 1991 N-Channel Logic Level Enhancem ent-M ode Power Field-Effect Transistor L2 FET F e a tu re s • Package TO-220AB TOP VIEW 25A , 60 V • rDS(ON) = 0.085f2 DRAIN (FLANGE) • Design O p tim ized for 5V G ate Drives u


    OCR Scan     		PDF RFP25N06L O-220AB 085f2 FP25N06L f25n06l transistor marking rip RFP25N06L F25N06 transistor l 2

    transistor tic 106 N

    Abstract: No abstract text available
    Text: • n *1302571 * » 00547^7 4T0 ■ « August 1991 HAS R F P 2 5 N 6 L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistor L2FET Features Package • 25A, 60V • rDS(ON) = 0 .0 8 5 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan     		PDF RFP25N06L 92CS-37075 461CF? RFP25N06L AN7254 AN-7260. transistor tic 106 N