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    TRANSISTOR 600V 500A Search Results

    TRANSISTOR 600V 500A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 600V 500A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 600v 500a

    Abstract: QM500HA-H E80276 Mitsubishi transistor 500a diode
    Text: MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H • • • • • IC Collector current . 500A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original     		PDF QM500HA-H E80276 E80271 transistor 600v 500a QM500HA-H E80276 Mitsubishi transistor 500a diode

    qm300ha-h

    Abstract: transistor b 1560 QM300HA-HB E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original     		PDF QM300HA-HB E80276 E80271 108MAX. 62MAX. 36MAX. QM300HISTICS qm300ha-h transistor b 1560 QM300HA-HB E80276

    IRFI840G

    Abstract: C-150 IRGIB7B60KD
    Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 94620B IRGIB7B60KD O-220AB IRFI840G O-220AB IRFI840G C-150 IRGIB7B60KD

    IRFI840G

    Abstract: ic MARKING QG C-150 IRGIB7B60KD
    Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 94620B IRGIB7B60KD O-220AB O-220AB IRFI840G ic MARKING QG C-150 IRGIB7B60KD

    B1370

    Abstract: B1370 transistor r b1370 transistor transistor b1370 b1370, transistor b1370 e
    Text: PD - 94620A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4620A IRGIB7B60KD O-220AB IRFI840G B1370 B1370 transistor r b1370 transistor transistor b1370 b1370, transistor b1370 e

    C-150

    Abstract: IRFI840G IRGIB7B60KD
    Text: PD - 94620 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGIB7B60KD O-220AB IRFI840G O-220AB C-150 IRFI840G IRGIB7B60KD

    Untitled

    Abstract: No abstract text available
    Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 94620B IRGIB7B60KD O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGIB7B60KDPbF O-220AB O-220AB

    IGBT 3300V 250A

    Abstract: DIM250WKS06-S000 DIM250WKS06 DIM250WLS06-S000 DIM250WKLS06-S000 ups 700 600V dc IGBT
    Text: DIM250WLS06-S000 DIM250WLS06-S000 IGBT Chopper Module Lower Arm Control PDS5731-1.0 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A


    Original     		PDF DIM250WLS06-S000 PDS5731-1 DIM250WKS06-S000 IGBT 3300V 250A DIM250WKS06 DIM250WLS06-S000 DIM250WKLS06-S000 ups 700 600V dc IGBT

    transistor 600v 500a

    Abstract: DIM500BSS06-S000
    Text: DIM500BSS06-S000 DIM500BSS06-S000 Single Switch IGBT Module DS5677-1.4 April 2006 LN24534 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop Isolated Base IC (max) 500A ■ IC(PK) (max) 1000A


    Original     		PDF DIM500BSS06-S000 DS5677-1 LN24534) DIM500BSS06-S000 transistor 600v 500a

    DIM500BSS06-S000

    Abstract: transistor 600v 500a
    Text: DIM500BSS06-S000 DIM500BSS06-S000 Single Switch IGBT Module DS5677-1.3 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop Isolated Base IC (max) 500A ■ IC(PK) (max) 1000A APPLICATIONS


    Original     		PDF DIM500BSS06-S000 DS5677-1 DIM500BSS06-S000 transistor 600v 500a

    MJ 800

    Abstract: CIRCUIT DIAGRAM UPS IGBT 3300V 250A lm 3886 ac motor speed control circuit diagram with IGBT bi-directional switches IGBT DC MOTOR SPEED CONTROL USING IGBT HALF BRIDGE MOTOR MODULE IC 4022 ups circuit diagram using igbt
    Text: DIM250WHS06-S000 DIM250WHS06-S000 Half Bridge IGBT Module PDS5676-1.3 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A APPLICATIONS


    Original     		PDF DIM250WHS06-S000 PDS5676-1 DIM250WHS06-S000 MJ 800 CIRCUIT DIAGRAM UPS IGBT 3300V 250A lm 3886 ac motor speed control circuit diagram with IGBT bi-directional switches IGBT DC MOTOR SPEED CONTROL USING IGBT HALF BRIDGE MOTOR MODULE IC 4022 ups circuit diagram using igbt

    DIM250WKS06-S000

    Abstract: IGBT 3300V 250A DIM250WKS06 pwm ac chopper CIRCUIT DIAGRAM UPS bi-directional switches IGBT C 3886 DC MOTOR SPEED CONTROL USING chopper DC MOTOR SPEED CONTROL USING IGBT dc to dc chopper using igbt
    Text: DIM250WKS06-S000 DIM250WKS06-S000 IGBT Chopper Module Upper Arm Control PDS5730-1.0 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A


    Original     		PDF DIM250WKS06-S000 PDS5730-1 DIM250WKS06-S000 IGBT 3300V 250A DIM250WKS06 pwm ac chopper CIRCUIT DIAGRAM UPS bi-directional switches IGBT C 3886 DC MOTOR SPEED CONTROL USING chopper DC MOTOR SPEED CONTROL USING IGBT dc to dc chopper using igbt

    GP350MHB06S

    Abstract: No abstract text available
    Text: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base


    Original     		PDF GP350MHB06S DS4923-6 GP350MHB06S

    GP350MHB06S

    Abstract: No abstract text available
    Text: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces October 2001 version, DS4923-5.0 FEATURES DS4923-6.0 April 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base


    Original     		PDF GP350MHB06S DS4923-5 DS4923-6 GP350MHB06S

    GP350MHB06S

    Abstract: No abstract text available
    Text: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base


    Original     		PDF GP350MHB06S DS4923-6 GP350MHB06S

    DIM600BSS12-A000

    Abstract: No abstract text available
    Text: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces December 2003 version, issue DS5692-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5692-2.0 February 2004 KEY PARAMETERS VCES


    Original     		PDF DIM600BSS12-A000 DS5692-1 PDS5692-2 DIM600BSS12-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module DS5692-1.3 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V


    Original     		PDF DIM600BSS12-A000 DS5692-1 DIM600BSS12-A000

    DIM600BSS12-A000

    Abstract: transistor 600v 500a
    Text: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5692-3.0 June 2004 KEY PARAMETERS VCES typ


    Original     		PDF DIM600BSS12-A000 PDS5692-2 DS5692-3 DIM600BSS12-A000 transistor 600v 500a

    DIM600BSS12-A000

    Abstract: No abstract text available
    Text: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module DS5692-3.1 June 2007 LN25362 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES VCE(sat)* (typ) IC (max) IC(PK) (max) 1200V


    Original     		PDF DIM600BSS12-A000 DS5692-3 LN25362) DIM600BSS12-A000

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H lc Collector current. .500A V c e x Collector-emitter voltage. . 600V hFE DC current gain. 750 Insulated Type UL Recognized


    OCR Scan     		PDF QM500HA-H E80276 E80271

    transistor 1002

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES j QM500HA-H | HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H • lc Collector cu rre n t. 500A • VCEX Collector-emitter vo ltag e .600V • hFE DC current g a in . 750


    OCR Scan     		PDF QM500HA-H E80276 E80271 transistor 1002

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 -3.1 D ecem ber 1998 The GP350MHB06S is a dual switch 600V robust n channel enhancem ent m ode Insulated G ate Bipolar Transistor IGBT module. Designed for low power loss


    OCR Scan     		PDF DS4923-3 GP350MHB06S DS4923 GP350MHB06S

    ge traction motor

    Abstract: No abstract text available
    Text: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module


    OCR Scan     		PDF GP500LSS06S DS4324 GP500LSS06S ge traction motor