TRANSISTOR 600V 25 A Search Results

TRANSISTOR 600V 25 A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 600V 25 A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
8N60 Abstract: 600v 75a mosfet transistor 8n60 8N60 equivalent MOSFET transistor 75A 600V MOSFET Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 8N60 •FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified	Original		PDF
Untitled Abstract: No abstract text available Text: Jbztni-L.onaucto'i iJ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor MTP1N60 FEATURES • Drain Current -ID= 1A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min)	Original	MTP1N60 O-251	PDF
9n60 Abstract: 9n60 mosfet mosfet transistor transistor 9n60 N-Channel 600V MOSFET Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 9N60 •FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified	Original		PDF
Untitled Abstract: No abstract text available Text: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP7N60 N-Channel Mosfet Transistor • FEATURES • Drain Current -ID= 7A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min) • Static Drain-Source On-Resistance	Original	MTP7N60	PDF
Untitled Abstract: No abstract text available Text: Cx / i, LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 6A@ TC=25°C • Drain Source Voltage1 0(2) •, ^f£\ /-s, : VDSs= 600V(Min)	Original	MTP6N60 O-220C	PDF
APT30GF60BN Abstract: APT30GF60BNU1 Text: ADVANCED PO W ER Te c h n o lo g y APT30GF60BNU1 600V 30A WER MOS IV IGBÏ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST PARALLEL DIODE M A X IM U M R A TIN G S Symbol VcE S All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	APT30GF60BNU1 O-247AD APT30GF60BN	PDF
6r950c6 Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6	Original	IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950	PDF
6R190E6 Abstract: IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6	Original	IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING	PDF
6R190C6 Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6	Original	IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 726-IPB60R190C6 IPB60R190C6 6R190C6 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPW60R190C6 6r190c6 infineon 6R19	PDF
6R280E6 Abstract: IPA60R280E6 IPP60R280E6 IPW60R280E6 6r280 IPx60R280E6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6	Original	IPx60R280E6 IPP60R280E6, IPA60R280E6 IPW60R280E6 6R280E6 IPA60R280E6 IPP60R280E6 IPW60R280E6 6r280 IPx60R280E6 JESD22	PDF
6r600e6 Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6	Original	IPx60R600E6 IPD60R600E6, IPP60R600E6 IPD60R600E6 6r600e6 infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19	PDF
6R520E6 Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6	Original	IPx60R520E6 IPP60R520E6, IPA60R520E6 6R520E6 IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520	PDF
6R380e6 Abstract: IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6	Original	IPx60R380E6 IPP60R380E6, IPA60R380E6 6R380e6 IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance	PDF
6R070C6 Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description	Original	IPW60R070C6 6R070C6 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22	PDF

EL series SMD transistor Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description	Original	IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299	PDF
6r385P Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description	Original	IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl	PDF
transistor 6R385P Abstract: 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast	Original	IPL60R385CP 150mm² 726-IPL60R385CP transistor 6R385P 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode	PDF
6R199P Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description	Original	IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199	PDF
FD600R12KF4 Abstract: G1 TRANSISTOR Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A13/97 FD600R12KF4 FD600R12KF4 G1 TRANSISTOR	PDF
G1 TRANSISTOR Abstract: FD600R12KF4 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A13/97 FD600R12KF4 G1 TRANSISTOR FD600R12KF4	PDF
FD400R12KF4 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A15/97 FD400R12KF4 FD400R12KF4	PDF
FD400R12KF4 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A15/97 FD400R12KF4	PDF
IGBT FF 300 r12 Abstract: FF400R12KF4 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	A15/97 IGBT FF 300 r12 FF400R12KF4	PDF
FD600R12KF4 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A13/97 FD600R12KF4	PDF

TRANSISTOR 600V 25 A Search Results

TRANSISTOR 600V 25 A Result Highlights (5)

TRANSISTOR 600V 25 A Datasheets Context Search

8N60

Untitled

9n60

Untitled

Untitled

APT30GF60BN

6r950c6

6R190E6

6R190C6

6R280E6

6r600e6

6R520E6

6R380e6

6R070C6

EL series SMD transistor

6r385P

transistor 6R385P

6R199P

FD600R12KF4

G1 TRANSISTOR

FD400R12KF4

FD400R12KF4

IGBT FF 300 r12

FD600R12KF4