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    TRANSISTOR 60 VOLT Search Results

    TRANSISTOR 60 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 60 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 1685 transistor

    Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
    Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors


    Original     		PDF PH1617-60 PH1617-60 1615MHz 1685MHz c 1685 transistor 1685 transistor transistor c 1685 1615mhz

    KSP55

    Abstract: KSP56 PNP EPITAXIAL SILICON TRANSISTOR 60V
    Text: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=KSP55: 60V KSP56: 80V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating Unit -60 -80 V V -60 -80


    Original     		PDF KSP55/56 KSP55: KSP56: 625mW KSP55 KSP56 KSP55 KSP56 PNP EPITAXIAL SILICON TRANSISTOR 60V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ・Complementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25℃ RATING UNIT VCBO -60 V Collector-Base Voltage H F Collector-Emitter Voltage VCES -60


    Original     		PDF MPSA77 MPSA27. PW300 -100mA -100mA, -10mA

    MPSA27

    Abstract: MPSA77
    Text: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage


    Original     		PDF MPSA27 MPSA77. 1000k MPSA27 MPSA77

    MPSA27

    Abstract: MPSA77 MPS-A27
    Text: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage


    Original     		PDF MPSA77 MPSA27. MPSA27 MPSA77 MPS-A27

    MPSA27

    Abstract: MPSA77
    Text: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA27. N E K G J D RATING UNIT VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500


    Original     		PDF MPSA77 MPSA27. 1000k MPSA27 MPSA77

    Untitled

    Abstract: No abstract text available
    Text: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is


    Original     		PDF GHz20060 GHz20060

    BD439

    Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V


    Original     		PDF BD439/441 O-126 BD440, BD442 BD439 BD441 BD439 BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440

    transistor SMD P2F

    Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
    Text: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage


    Original     		PDF PXT2907A transistor SMD P2F smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F

    1920AB60

    Abstract: max6011
    Text: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


    Original     		PDF 1920AB60 1920AB60 max6011

    1920CD60

    Abstract: 55SW
    Text: 1920CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


    Original     		PDF 1920CD60 1920CD60 55SW

    KST55

    Abstract: 2H2G mark 2H SOT-23 KSP55 KST56
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -80 V V VEBO IC PC T STG -60 -80 -4 -500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST55 :KST56


    Original     		PDF KST55/56 OT-23 KST55 KST56 KSP55 KST55 2H2G mark 2H SOT-23 KST56

    free transistor equivalent book

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D088 PBSS4160T SCA75 613514/01/pp12 free transistor equivalent book

    PBSS5160T

    Abstract: bcp52 replacement BCP52 BCX52 PBSS4160T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 23 2004 May 27 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS5160T SCA76 R75/02/pp10 PBSS5160T bcp52 replacement BCP52 BCX52 PBSS4160T

    free transistor equivalent book

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V; 1 A PNP low VCEsat BISS transistor Product specification 2003 Jun 23 Philips Semiconductors Product specification 60 V; 1 A PNP low VCEsat (BISS) transistor PBSS5160T FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D088 PBSS5160T SCA75 613514/01/pp12 free transistor equivalent book

    1819CD60

    Abstract: No abstract text available
    Text: 1819CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1805 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1805-1880 MHz. This transistor is specifically designed for LINEAR PERSONAL PCN CDMA


    Original     		PDF 1819CD60 1819CD60

    KST05

    Abstract: KSP05 KST06
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 60 80 V V VEBO IC PC T STG 60 80 4 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST05 :KST06 Collector-Emitter Voltage


    Original     		PDF KST05/06 OT-23 KST05 KST06 KSP05 KST05 KST06

    sot23 mark code CB

    Abstract: la marking
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Rating Unit 60 60 V V V V ebo lc Pc T sto 60 80 4 500 350 150 Rm (i-a) 357 C haracteristic Sym bol Collector Base Voltage VcBO :KST0S :KST06 Collector-Em itter Voltage


    OCR Scan     		PDF KST05/06 OT-23 KST06 KST05 KSP05 sot23 mark code CB la marking

    Untitled

    Abstract: No abstract text available
    Text: MPSA05 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCeo=60V TO -92 • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS(Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO 60 60 4 500 625 150 -5 5 -1 5 0


    OCR Scan     		PDF MPSA05 625mW 100mA,

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 - JUNE 94_ FEATURES * * 60 Volt VCE0 Gain of 10k at lc=100mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -60 V Collector-Em itter Voltage v CEO -60


    OCR Scan     		PDF 100mA 001G35S

    UU15

    Abstract: tic 260 PH1617-60 "Power TRANSISTOR"
    Text: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This


    OCR Scan     		PDF PH1617-60 PH1617-60 TT50M5QA 11Bt- 1685MHz 1615MHz 1685MHz UU15 tic 260 "Power TRANSISTOR"

    2g marking code

    Abstract: KSP55 KST55 KST56 2H2G
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST55/56 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage Rating Unit -60 -80 V -60 -80 -4 -500 350 150 V mA mW °C 357 °C /W VcBO : KST55 : KST56 C ollector-E m itter Voltage


    OCR Scan     		PDF KST55/56 KST55 KST56 KSP55 -100nA, 2g marking code KST55 KST56 2H2G

    1g marking

    Abstract: No abstract text available
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage


    OCR Scan     		PDF KST05/06 KST05 KST06 KSP05 1g marking

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR ISSUE 2 - MARCH 94 FMMT2484 Q FEATURES * 60 Volt V,CEO PARTMARKING DETAIL - 4G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 60 V V CEO 60 V Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF FMMT2484 VCEr45V, 100uA* 500uA, 140KHz 200Hz 15kHz 300us.