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    TRANSISTOR 5FT Search Results

    TRANSISTOR 5FT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5FT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 5ft sot363

    Abstract: MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC856S PNP general purpose double transistor Product specification 1999 Aug 24 Philips Semiconductors Product specification PNP general purpose double transistor BC856S FEATURES • Two transistors in one package


    Original     		PDF MBD128 BC856S MAM339 SC-88 OT363) SC-88) 115002/01/pp8 marking 5ft sot363 MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: | FORWARD INTERNATIONAL ELECTRONICS L ID . 2N3906 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to 2N3904 * Collector-Emitter Voltage: Vceo=-40V * Collector Dissipation; Pc=625 mW Ta=25°C ABSOLUTE MAXIMUM RATINGS at Tamb=25*C


    OCR Scan     		PDF 2N3906 2N3904 -10uA -100mA -10mA -50mA

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728

    Untitled

    Abstract: No abstract text available
    Text: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R


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    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP627, TLP627-2, TLP627-4 DATA GaAs IRED & PHOTO-TRANSISTOR TLP627 U n it in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. ti 2 The TOSHIBA TLP627, -2, and -4 consist of a gallium


    OCR Scan     		PDF TLP627, TLP627-2, TLP627-4 TLP627) TLP627

    2SC2116

    Abstract: TRANSISTOR S 813
    Text: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2sc2116 500MHz 2SC2116 TRANSISTOR S 813

    BUK455-500B

    Abstract: BJE 80 diode T0220AB
    Text: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation


    OCR Scan     		PDF bbS3131 BUK455-500B T0220AB 03Qbfc /V-10 BJE 80 diode

    b175 transistor

    Abstract: b173 6DI75M-050 IS18 P460 T151 T810
    Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF 6DI75M-050 95t/R89 Shl50 b175 transistor b173 IS18 P460 T151 T810

    wi fi schematic

    Abstract: M106 T151 T930
    Text: 1DI3OOZ-14O 300a ^ ± / < r7 - ^ C > D . - ) U : Outline Drawings POWER TRANSISTOR MODULE >3 21 29 •r X ~ ~ ïï_ ' F ea tures • High Voltage • 7 'J — Including Free W heeling Diode • A S O /^J a U • W Êflb Excellent Safe Operating Area Insulated Type


    OCR Scan     		PDF 1DI3OOZ-14O E82988 I95t/R89) Shl50 wi fi schematic M106 T151 T930

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    SPW-500-S

    Abstract: No abstract text available
    Text: 6DI30A-12CH30A M i N ' i i : Outline Drawings POWER TRANSISTOR MODULE : Features ì • 7 V —4*4 }) # 4 =t— Kl*3j0E Including Free Wheeling Dipde • hFE^ftv.' High DC Current Gain Insulated Type È * » ta ,ia I» ii »a[7 TiblrP*l*rmin»i* AMPMe. Î


    OCR Scan     		PDF 6DI30A-12CH30A) E82988 4i-i23i I95t/R89 5hl50 SPW-500-S

    characteristics of zener diode

    Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
    Text: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF 1DI300ZP-120 26-35kg E82988 095t/R89 characteristics of zener diode zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352

    Untitled

    Abstract: No abstract text available
    Text: D 1 O 2 O A - O 2 O 2 a / < 9 — !> ' Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Current • High DC Current Gain • Non Insulated Typ e : A p p lic a tio n s f High Power Switching • ftE ffW R S IK Uninterruptible Power Supply


    OCR Scan     		PDF 30S3-% I95t/R89

    3SK168

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CÖRP 12E D | OGDS4 7 S =1 T 'il'Z s r 3SK168 GaAs Dual Gate M ES Silicon Field-Effect Transistor 2053 -' TTITD Tb 'S- • U H F Amp, Mixer Applications 2252 Absolute H a z l a n Batlags at Ta=25°C Drain to Source Voltage 'DS Gatel to Source Voltage


    OCR Scan     		PDF 3SK168 100uA IS-20MA IS-313 IS-313A 3SK168

    SPT1002

    Abstract: B-226 B226S SFT1001 SFT1003 SFT1004 SFT1010 SFT1012 spt100 SOLID STATE INC
    Text: SOLID STATE DEVICES INC 1SE D |fl3bb011 QDQ21D1 T | T - 3 3 - iS ' PRELIMINARY DATA SHEET 5 -8 -8 5 SFT1002 AND SFTÍ004 100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS CASE STYLE R FEATURES TO—3 WITH .0 0 0 PINS • • • • • • • • 14830 Valley V iew Avenue


    OCR Scan     		PDF SFT10Ã SFT1001 SFT1003 20ohms) 20Vdc, 15Adc) 100Vdc, 60Vdc, 300us. SPT1002 B-226 B226S SFT1003 SFT1004 SFT1010 SFT1012 spt100 SOLID STATE INC

    2SA939

    Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik
    Text: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k


    OCR Scan     		PDF 2sa839 -150V 8SC1669 220AB 8-10A1A 2SA939 2SA839â 2SA839-Y 200X2mm 2SA939 B 2SA839 HI-FI AMP 2SA839-0 sfik

    LTTG

    Abstract: 1DI75E-100 30S3 M206 T460 T760 T930
    Text: 1DI75E-100 75a / < 7 n .-)U - h 7 I • Out l i ne D raw ings POWER TRANSISTOR MODULE : Features • If/± • High Voltage 7 '; - j m uv * • A S O tf^ v .' - k rt * Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type \R ìà • A p p lic a tio n s


    OCR Scan     		PDF 1DI75E-100 I95t/R89) Shl50 LTTG 30S3 M206 T460 T760 T930

    P460

    Abstract: T151 T810 transistor and schematic symbols FA-MT
    Text: ETM36-O3O 200a / < 7 - Y=7 =l-)V I : Out l i ne D raw ing s POWER TRANSISTOR MODULE 94 « e 9 ' Features ie \ • * y fc High Current • h F E ^ g tv High DC Current Gain £ •immm 3 / */ - Non Insulated Type XN s T Y, f t p-J $ a 2-*M 7e |B| 82 24 13 i 9 /


    OCR Scan     		PDF ETM36-O3O l95t/R89 Shl50 P460 T151 T810 transistor and schematic symbols FA-MT

    transistor 009

    Abstract: diode B61 transistor bf 760 S535 M109 T810 T930
    Text: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 7*4 "/•?■>?


    OCR Scan     		PDF 11S19 l95t/R89 transistor 009 diode B61 transistor bf 760 S535 M109 T810 T930

    BT 815 transistor

    Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
    Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m


    OCR Scan     		PDF 2SA1625 PWS300 SC-43B BT 815 transistor Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108

    2SK992

    Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
    Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.


    OCR Scan     		PDF 2SK992 26-Lfli06) 332-H 37-ffi 29-BlSfl 2SK992 U71E 720-ES RXSU 4 T108 T460 332h tt 22

    Untitled

    Abstract: No abstract text available
    Text: ETM36-O3O 200a / < 7 - Y=7 =l-)V I : Out l i ne D raw ing s POWER TRANSISTOR MODULE 94 « ' Features \ • * y fc High Current • h F E ^ g tv High DC Current Gain £ • im m m 3 / */ - N o n I n s u la te d T y p e 7e e 82 24 13 i 9 ie XN s T Y, ft $p- J


    OCR Scan     		PDF ETM36-O3O I95t/R89)