Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 5DN Search Results

    TRANSISTOR 5DN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Crystal-to-HCSL 100MHz PCI EXPRESS Clock Synthesizer IDT8V41S104I DATA SHEET General Description Features The IDT8V41S104I is a PLL-based clock generator specifically designed for PCI EXPRESS™ Generation 3 applications. This device generates a 100MHz differential HCSL clock from an input


    Original     		PDF 100MHz IDT8V41S104I IDT8V41S104I 25MHz. 25MHz

    Untitled

    Abstract: No abstract text available
    Text: STS5DNF20V N-channel 20 V, 0.030 Ω, 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STS5DNF20V 20 V < 0.040Ω @ 4.5 V < 0.045Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface


    Original     		PDF STS5DNF20V STS5DNF20V

    5DNF20V

    Abstract: STS5DNF20V 5DNF
    Text: STS5DNF20V N-channel 20 V, 0.030 Ω, 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STS5DNF20V 20 V < 0.040Ω @ 4.5 V < 0.045Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface


    Original     		PDF STS5DNF20V STS5DNF20V 5DNF20V 5DNF

    mps 0548

    Abstract: pci expres card transistor 5dn
    Text: Crystal-to-HCSL 100MHz PCI EXPRESS Clock Synthesizer IDT8V41S104I DATA SHEET General Description Features The IDT8V41S104I is a PLL-based clock generator specifically designed for PCI EXPRESS™ Generation 3 applications. This device generates a 100MHz differential HCSL clock from an input


    Original     		PDF 100MHz IDT8V41S104I IDT8V41S104I 25MHz. 25MHz mps 0548 pci expres card transistor 5dn

    5DN3V

    Abstract: stc5dnf30v
    Text: STC5DNF30V N-channel 30 V, 0.027 Ω, 5 A TSSOP8 2.7 V - driver STripFET Power MOSFET Features Type VDSS RDS on max ID STC5DNF30V 30V < 0.031 Ω ( @ 4.5 V ) < 0.035 Ω ( @ 2.7 V ) 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface


    Original     		PDF STC5DNF30V 5DN3V stc5dnf30v

    Untitled

    Abstract: No abstract text available
    Text: UM375XX 300mA, Micropower, VLDO Linear Regulator UM375XXS SOT23-5 UM375XXP SOT353 General Description The UM375XX series are VLDO very low dropout linear regulators designed for low power portable applications. Typical output noise is only 100 VRMS and maximum dropout is just


    Original     		PDF UM375XX 300mA, UM375XXS OT23-5 UM375XXP OT353 UM375XX 200mV 100mA 300mA.

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


    OCR Scan     		PDF Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281