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    TRANSISTOR 59B Search Results

    TRANSISTOR 59B Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 59B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M430F1232

    Abstract: rtd pt-100 amplifier circuit bel 187 transistor npn pnp transistor data sheet bel 188 pt100 temperature sensor schematic msp430 pt100 temperature sensor schematic bel 187 NPN TRANSISTOR 43a Hall Effect Magnetic Sensors circuit diagram of wireless door lock system amplifier 5.1 surrounding system circuit diagram
    Text: TEAM LRN Analog and Digital Circuits for Electronic Control System Applications TEAM LRN Analog and Digital Circuits for Electronic Control System Applications Using the TI MSP430 Microcontroller by Jerry Luecke AMSTERDAM • BOSTON • HEIDELBERG • LONDON


    Original     		PDF MSP430 M430F1232 rtd pt-100 amplifier circuit bel 187 transistor npn pnp transistor data sheet bel 188 pt100 temperature sensor schematic msp430 pt100 temperature sensor schematic bel 187 NPN TRANSISTOR 43a Hall Effect Magnetic Sensors circuit diagram of wireless door lock system amplifier 5.1 surrounding system circuit diagram

    transistor 56B marking

    Abstract: No abstract text available
    Text: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary PNP Devices : BC846/BC847/BC848/BC849 Series


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 A063-REV transistor 56B marking

    SOT223 MARKING L5

    Abstract: 58AX MARKING A4 transistor marking SH SOT23 mosfet L5509 marking 51 "SC-62" regulator marking SH SOT23 diodes sc62 MARKING CODE APL5508 l5508
    Text: APL5508/5508R/5509/5509R Low IQ, Low Dropout 560mA Fixed Voltage Regulator Features General Description • • • • The APL5508/9/R series are micropower, low dropout linear regulators, which operate from 2.7V to 6V input voltage and deliver up to 560mA. Typical dropout voltage is only 600mV at 560mA loading. Designed for use in battery-powered system, the low


    Original     		PDF APL5508/5508R/5509/5509R 560mA APL5508/9/R 560mA. 600mV APL550± SOT223 MARKING L5 58AX MARKING A4 transistor marking SH SOT23 mosfet L5509 marking 51 "SC-62" regulator marking SH SOT23 diodes sc62 MARKING CODE APL5508 l5508

    transistor 56B marking

    Abstract: marking c8 transistor MARKING C8 MARKING bc847 SOT-23
    Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-750, BC856A BC856B transistor 56B marking marking c8 transistor MARKING C8 MARKING bc847 SOT-23

    transistor 56B marking

    Abstract: BC857B PNP marking c8 transistor
    Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts CURRENT 330 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750, BC856A transistor 56B marking BC857B PNP marking c8 transistor

    transistor 56B marking

    Abstract: Transistor 59B 856B 858C BC856 MARKING bc847 SOT-23 B 856B
    Text: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary PNP Devices : BC846/BC847/BC848/BC849 Series


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 transistor 56B marking Transistor 59B 856B 858C MARKING bc847 SOT-23 B 856B

    SOT223 MARKING L5

    Abstract: 58rf 59rb 58AX dvd head 58RB 58RM 59Rd 30A sot-89 PL5508
    Text: APL5508/5508R/5509/5509R Low IQ, Low Dropout 560mA Fixed Voltage Regulator Features General Description • • • • The APL5508/9/R series are micropower, low dropout linear regulators, which operate from 2.7V to 6V input voltage and deliver up to 560mA. Typical dropout voltage is only 600mV at 560mA loading. Designed for use in battery-powered system, the low


    Original     		PDF APL5508/5508R/5509/5509R 560mA APL5508/9/R 560mA. 600mV APL550 SOT223 MARKING L5 58rf 59rb 58AX dvd head 58RB 58RM 59Rd 30A sot-89 PL5508

    transistor 56B marking

    Abstract: 856B 858C BC856 BC857
    Text: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts SOT- 23 Unit: inch mm .119(3.00) .110(2.80) .103(2.60) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series .047(1.20) .056(1.40)


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-750 transistor 56B marking 856B 858C BC857

    transistor 56B marking

    Abstract: TRANSISTOR BC 119
    Text: BC856/BC857/BC858/BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER SOT- 23 225 mW Unit: inch mm FEATURES .103(2.60) .056(1.40) .047(1.20) Collector Current IC = -100mA Complimentary (NPN) Devices : BC846/BC847/BC848/BC849 Series


    Original     		PDF BC856/BC857/BC858/BC859 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-202 transistor 56B marking TRANSISTOR BC 119

    Untitled

    Abstract: No abstract text available
    Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 OT-23 -100mA BC846/BC847/BC848/BC849 2002/95/EC IEC61249

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC OT-323, MIL-STD-750, BC856AW BC856BW

    c858

    Abstract: BC856R
    Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 2002/95/EC IEC61249 OT-23 OT-23 c858 BC856R

    BC859B-AU

    Abstract: transistor BC SERIES BC856B-AU
    Text: BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 FTLUHTXDOLW\V\VWHPFHUWLILFDWH76 2002/95/EC IEC61249 OT-23 BC859B-AU transistor BC SERIES BC856B-AU

    Untitled

    Abstract: No abstract text available
    Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    1w200

    Abstract: No abstract text available
    Text: MICRO GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.


    OCR Scan     		PDF BCY58 BCY59 390aW tof20G 200mA IG-10Cte* 1w200

    TRANSISTOR A104

    Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
    Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general


    OCR Scan     		PDF BCY58 Ic-10â R2-700ohm TRANSISTOR A104 BCY59C BCY 85 A104 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    MJ16010

    Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
    Text: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in


    OCR Scan     		PDF MJ16010/D MJ16012 MJW16012 MJ16010 MJW16010 340F-03 O-247AE bi 370 transistor ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    TL 2262

    Abstract: transistor BJ 932 THU 1203 tl 2262 am 0B 2262 integrated circuit TL 2262 LV3A M-2280 marking 1n3 LZ21N3
    Text: SHARP SPEC No. ISSUE: EL115074B Jul. 22 1999 To ; PRELIMINARY S P E C I F I C A I O N S Product Type l/2-type 8.08mi Interline Color CCD Area Sensor with 2140k Pixels LZ21N3 Model No. SSSThis specifications contains 31 pages including the cover and appendix.


    OCR Scan     		PDF 2140k 0D3E137 LZ21N3 8C072ADC 00321b5 DD321b7 TL 2262 transistor BJ 932 THU 1203 tl 2262 am 0B 2262 integrated circuit TL 2262 LV3A M-2280 marking 1n3

    Untitled

    Abstract: No abstract text available
    Text: GEC PLES S EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S 3095-1 0 ZN1040E/AE UNIVERSAL COUNT/DISPLAY CIRCUIT Th e Z N 1 0 4 0 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and


    OCR Scan     		PDF ZN1040E/AE ZN1040