Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
|
Original
|
PDF
|
NSB1706DMW5T1G,
NSVB1706DMW5T1G
SC-88A
NSB1706DMW5T1/D
|
NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
|
Original
|
PDF
|
2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
|
Untitled
Abstract: No abstract text available
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
|
Original
|
PDF
|
BUD42D
D42DG
BUD42D/D
|
Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
|
Original
|
PDF
|
NSB1706DMW5T1G,
NSVB1706DMW5T1G
NSB1706DMW5T1/D
|
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
|
Original
|
PDF
|
REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
|
MJD127G
Abstract: No abstract text available
Text: MJD122, NJVMJD122 NPN , MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR
|
Original
|
PDF
|
MJD122,
NJVMJD122
MJD127,
NJVMJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD127G
|
nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
|
Original
|
PDF
|
2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
|
smd JH transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF1043 UHF power LDMOS transistor Preliminary specification 2002 Jul 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 FEATURES PINNING - SOT538A • Easy power control PIN DESCRIPTION
|
Original
|
PDF
|
BLF1043
SCA73
603516/02/pp11
smd JH transistor
|
Untitled
Abstract: No abstract text available
Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES
|
Original
|
PDF
|
MJD122,
NJVMJD122T4G
MJD127
2N6040â
2N6045
TIP120â
TIP122
TIP125â
TIP127
MJD122/D
|
NSVMUN5333
Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93
Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
|
Original
|
PDF
|
MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1GSeries
MUN5311DW1T1G
OT-363
MUN5311DW1T1/D
NSVMUN5333
SMUN5311DW1T1G
NSVMUN5333DW1T1G
Transistor BFR 93
|
MJD122
Abstract: TIP125-TIP127 mjd122g
Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES
|
Original
|
PDF
|
MJD122,
NJVMJD122T4G
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD122
mjd122g
|
Transistor BFR 93
Abstract: No abstract text available
Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
|
Original
|
PDF
|
MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1Gâ
MUN5311DW1T1G
MUN5311DW1T1/D
Transistor BFR 93
|
transistor marking 7D
Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
|
Original
|
PDF
|
MUN5211DW1T1G,
SMUN5211DW1T1G,
NSVMUN5211DW1T1GSeries
MUN5211DW1T1G
OT-363
MUN5211DW1T1/D
transistor marking 7D
MUN5214DW1T1G
SMUN5213DW1T1G
transistor marking code 7e
SOT363 MARKING CODE 7M
SMUN5235DW1T1G
|
33 GP
Abstract: BLF2045 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION
|
Original
|
PDF
|
M3D381
BLF2045
OT467A
budgetnum/printrun/ed/pp11
33 GP
BLF2045
BP317
|
|
|
BLF2043F
Abstract: BP317 enamelled copper wire
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION
|
Original
|
PDF
|
M3D381
BLF2043F
OT467C
603516/02/pp11
BLF2043F
BP317
enamelled copper wire
|
Untitled
Abstract: No abstract text available
Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a
|
Original
|
PDF
|
MUN5111DW1T1G
SMUN5111DW1T1G
OT-363
MUN5111DW1T1/D
|
rf transistor mar 8
Abstract: CBD46 BLF1043 MAR 749 smd JH transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • High power gain
|
Original
|
PDF
|
M3D438
BLF1043
OT538A
SCA73
603516/02/pp11
rf transistor mar 8
CBD46
BLF1043
MAR 749
smd JH transistor
|
BLF2045
Abstract: BP317 SOT467C
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Dec 06 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION
|
Original
|
PDF
|
M3D381
BLF2045
OT467C
budgetnum/printrun/ed/pp11
BLF2045
BP317
SOT467C
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
|
OCR Scan
|
PDF
|
2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
|
transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
|
OCR Scan
|
PDF
|
2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
|
DTC323TK
Abstract: No abstract text available
Text: DTC323TK Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • • package marking: DTC323TK; H02 in addition to standard features of digital transistor, this transistor has: — low collector saturation voltage,
|
OCR Scan
|
PDF
|
DTC323TK
SC-59)
DTC323TK;
DTC323TK
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
diode T-71
Abstract: BUK657-400B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
|
OCR Scan
|
PDF
|
BUK657-400B
T0220AB
BUK657-400B
diode T-71
|
