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    TRANSISTOR 5610 Search Results

    TRANSISTOR 5610 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5610 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6507-75C

    Untitled

    Abstract: No abstract text available
    Text: BUK6607-75C N-channel TrenchMOS FET Rev. 2 — 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6607-75C

    BR 5610

    Abstract: Electro-Hydraulic buk6507 buk6507-75c
    Text: BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6507-75C BR 5610 Electro-Hydraulic buk6507 buk6507-75c

    Untitled

    Abstract: No abstract text available
    Text: BUK6507-75C N-channel TrenchMOS FET Rev. 01 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6507-75C

    Untitled

    Abstract: No abstract text available
    Text: BUK6607-75C N-channel TrenchMOS FET Rev. 2 — 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6607-75C

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    5610 transistor

    Abstract: METAL DETECTOR circuit for make SD5600 metal detector schematic SD5610 metal detectors IC transistor 5610
    Text: SD5600/5610 Optoschmitt Detector FEATURES • TO-46 metal can package • 6¡ nominal acceptance angle • High noise immunity output • TTL/LSTTL/CMOS compatible • Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    Original     		PDF SD5600/5610 SD5600) SD5610) SE3450/5450, SE3455/5455 SE3470/5470 INFRA-81 SD5600/5610 5610 transistor METAL DETECTOR circuit for make SD5600 metal detector schematic SD5610 metal detectors IC transistor 5610

    SD5600

    Abstract: 5610 transistor SD5610 METAL DETECTOR circuit for make
    Text: SD5600/5610 Optoschmitt Detector FEATURES • TO-46 metal can package • 6¡ nominal acceptance angle • High noise immunity output • TTL/LSTTL/CMOS compatible • Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    Original     		PDF SD5600/5610 SD5600) SD5610) SE3450/5450, SE3455/5455 SE3470/5470 INFRA-81 SD5600/5610 SD5600 5610 transistor SD5610 METAL DETECTOR circuit for make

    metal detectors IC

    Abstract: 5610 transistor transistor 5610 METAL DETECTOR circuit for make metal detector schematic SD5600 Metal Detector Metal Detector T2 SD5610 5610 T
    Text: 17 September 1997 SD5600/5610 Optoschmitt Detector FEATURES • TO-46 metal can package • 6¡ nominal acceptance angle • High noise immunity output • TTL/LSTTL/CMOS compatible • Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    Original     		PDF SD5600/5610 SD5600) SD5610) SE3450/5450, SE3455/5455 SE3470/5470 INFRA-81 SD5600/5610 metal detectors IC 5610 transistor transistor 5610 METAL DETECTOR circuit for make metal detector schematic SD5600 Metal Detector Metal Detector T2 SD5610 5610 T

    SD5600

    Abstract: SD5600-001 SD5610-001 SD5610 5610 transistor
    Text: SD5600/5610 Optoschmitt Detector INFRA-81.TIF FEATURES • TO-46 metal can package • 6° nominal acceptance angle • High noise immunity output • TTL/LSTTL/CMOS compatible • Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    Original     		PDF SD5600/5610 INFRA-81 SD5600) SD5610) SE3450/5450, SE3455/5455 SE3470/5470 SD5600/5610 INFRA-62 INFRA-61 SD5600 SD5600-001 SD5610-001 SD5610 5610 transistor

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 1^53^31 0020540 Q 2SE D B U K 456-1000A B U K 456-1000B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 56-1000A 456-1000B BUK456 -1000A -1000B bt53131

    transistor 5750

    Abstract: 2N5260
    Text: VOLTAGE C O N TR O LLE D O S C ILLA TO R M O DEL M F C -5 35 0 A ULTRA HIGH FREQUENCY 5350 - 5750 MHZ FEATURES: • ■ ■ ■ TUNING VOLTAGE: 1 to 4 VDC AVERAGE TUNING SENSITIVITY: 170 - 230 MINIATURE, SURFACE MOUNT LOW COST DESCRIPTION: Synergy’s voltage controlled oscillator consists of a transistor oscillator circuit with a variable reactance in the


    OCR Scan     		PDF

    SD5600-001

    Abstract: 5610 transistor SD5610-001
    Text: SD5600/5610 Optoschm itt Detector FEATURES • • • • • TO-46 metal can package 6° nominal acceptance angle High noise immunity output TTL7LSTTL/CMOS compatible Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    OCR Scan     		PDF SD5600/5610 SD5600) SD5610) SE345 V5450, SE3455/5455 SE3470/5470 SD5600/5610 SD5600-001 5610 transistor SD5610-001

    Untitled

    Abstract: No abstract text available
    Text: SD5600/5610 Optoschmitt Detector FEA T U R ES • TO-46 metal can package • 6° nominal acceptance angle • High noise immunity output • TTL/LSTTL/CMOS compatible . Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    OCR Scan     		PDF SD5600/5610 SD5600) SD5610) SE3450/5450, SE3455/5455 SE3470/5470 INFRA-81 SD5600/5610 -44-V

    SD5600

    Abstract: 5610 oc
    Text: SD5600/5610 Optoschm itt Detector FEATURES • TO-46 metal can package • 6° nominal acceptance angle • High noise immunity output . TTL/LSTTL/CMOS compatible . Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to


    OCR Scan     		PDF SD5600/5610 SD5600) SD5610) SE3450/5450, SE3455/5455 SE3470/5470 SD5600/5610 on-40 -44-V SD5600 5610 oc

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF