Untitled
Abstract: No abstract text available
Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5002
2N5003
MIL-PRF-19500
2N5002J)
2N5002JX)
2N5002JV)
MIL-STD-750
MIL-PRF-19500/534
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Untitled
Abstract: No abstract text available
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5004J
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2N5004
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
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2N5002
Abstract: 2N5002J 2N5002JV 2N5002JX 2N5003
Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5002
2N5003
MIL-PRF-19500
2N5002J)
2N5002JX)
2N5002JV)
MIL-STD-750
MIL-PRF-19500/534
2N5002
2N5002J
2N5002JV
2N5002JX
2N5003
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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2N5004
Abstract: No abstract text available
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5004
2N5005
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
2N5004
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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2N5004
Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5004
2N5005
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
2N5004
2N5004 JANTXV
NPN/transistor C 331
switching transistor 331
2N5004J
2N5004JV
2N5005
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2N5002
Abstract: No abstract text available
Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5002J • JANTX level (2N5002JX)
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2N5002
MIL-PRF-19500
2N5002J)
2N5002JX)
2N5002JV)
MIL-STD-750
MIL-PRF-19500/534
2N5002
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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BY206
Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION
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M3D088
BRY61
MGL167
MGC421
SCA63
115002/00/03/pp8
BY206
BRY61
BZY88C8V2
BRY61 EQUIVALENT
"Programmable Unijunction Transistor"
unijunction application note
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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TRANSISTOR BI 243
Abstract: No abstract text available
Text: bSE D PHILIPS INTERNATIONAL • PHIN 711üflEb DQbSabB 534 BLV31 V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers for television transmitters and transposers. Diffused em itter ballasting resistors and the application of
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BLV31
711002b
00b2671
TRANSISTOR BI 243
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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TRANSISTOR BI 243
Abstract: vhf linear pulse power amplifier aanr BLV31 capacitor 224 J 332 DISC CAPACITOR d 331 Transistor WP380
Text: t.SE D PHILIPS INTERNATIONAL • 711ÜÔEb DGfc.EBb3 534 IPHIN BLV31 V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Diffused em itter ballasting resistors and the application o f
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BLV31
711002b
00b2671
7Z83384
7Z83385
7Z83386
TRANSISTOR BI 243
vhf linear pulse power amplifier
aanr
BLV31
capacitor 224
J 332 DISC CAPACITOR
d 331 Transistor
WP380
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK581-100A
OT223
BUK581
-100A
OT223.
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MARKING SMD pnp TRANSISTOR ec
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor
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PDTC124XEF
PDTC124XEF
SCA64
5002/00/02/pp8
MARKING SMD pnp TRANSISTOR ec
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC114TU NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor
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PDTC114TU
OT323
PDTC114TU
SCA63
5002/00/03/pp8
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