18P4G
Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP
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M54562P/FP
500mA
M54562P
M54562FP
500mA)
18P4G
20P2N-A
pnp darlington array
pnp 8 transistor array
npn 8 transistor array
24 "transistor array"
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit
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500mA
M54562WP
500mA)
Jul-2011
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pnp DARLINGTON TRANSISTOR ARRAY
Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit
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M54562WP
500mA
M54562WP
500mA)
Jul-2011
pnp DARLINGTON TRANSISTOR ARRAY
7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
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DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high
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M54562FP
500mA
M54562FP
500mA)
20P2N-A
DARLINGTON TRANSISTOR ARRAY
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M54562FP
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high
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M54562FP
500mA
M54562FP
500mA)
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pnp 8 transistor array
Abstract: M54562P pnp darlington array 18P4G 20P2N-A M54562FP PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M54562P/FP
500mA
M54562P
M54562FP
500mA)
pnp 8 transistor array
pnp darlington array
18P4G
20P2N-A
PNP DARLINGTON ARRAYS
npn 8 transistor array
Darlington Transistor Array
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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BUK9508-55
Abstract: BUK9608-55
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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OT404
BUK9608-55
BUK9508-55
BUK9608-55
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BUK9508-55
Abstract: PHB125N06LT 4100us
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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OT404
PHB125N06LT
BUK9508-55
PHB125N06LT
4100us
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buk9508
Abstract: BUK9508-55 BUK9608-55
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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OT404
BUK9608-55
buk9508
BUK9508-55
BUK9608-55
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45118
Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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BUK9608-55
OT404
drT404
BUK9608-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
\BUK9608-55
45118
TRANSISTOR SMD MARKING CODE RG
F/45118
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LTE42005S
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent
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LTE42005S
OT440A
LTE42005S
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BUK9508-55
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9508-55
BUK9508-55
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d1310
Abstract: 2SK3061 A2087
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3061 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching applications.
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2SK3061
2SK3061
O-220
O-220)
O-220
d1310
A2087
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BUK950
Abstract: BUK9508-55 BUK9508-55A
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9508-55
O220AB
BUK9508-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
\BUK9508-55
BUK950
BUK9508-55A
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BUK9508-55
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9508-55
BUK9508-55
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transistor BUK9508
Abstract: BUK9508-55 BUK950
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9508-55
transistor BUK9508
BUK9508-55
BUK950
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2SK3062
Abstract: 2SK3062-S 2SK3062-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance
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2SK3062
O-220AB
2SK3062-S
O-262
2SK3062-ZJ
O-263
2SK3062
2SK3062-S
2SK3062-ZJ
MP-25
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2SK3062
Abstract: 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance
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2SK3062
2SK3062
O-220AB
2SK3062-S
O-262
2SK3062-ZJ
O-263
2SK3062-Z
O-220SMD
2SK3062-S
2SK3062-Z
2SK3062-ZJ
MP-25
MP-25Z
d13101
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transistor AHs
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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BUK9608-55
transistor AHs
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transistor D 982
Abstract: gis 110 kv
Text: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very
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BUK9508-55
T0220AB
transistor D 982
gis 110 kv
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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OCR Scan
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PDF
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BUK9508-55
T0220AB
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S25 zener diode
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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OCR Scan
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BUK9508-55
T0220AB
IE-02
1E-05
S25 zener diode
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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