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    TRANSISTOR 5010 Search Results

    TRANSISTOR 5010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


    Original     		2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017 PDF

    R T O BH TRANSISTOR

    Abstract: 2SC5168 transistor CR NPN
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.


    OCR Scan     		2SC5168 2SC5168 100mV 250to800 270Hz X10-3 R T O BH TRANSISTOR transistor CR NPN PDF

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252 PDF

    TIP41C

    Abstract: TIP42C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO-220 The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES 1 TO - 252


    Original     		TIP42C O-220 TIP42C TIP41C TIP42CL TIP42C-TA3-T TIP42CL-TA3-T TIP42C-TN3-R TIP42CL-TN3-R TIP42C-TN3-T TIP41C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T PDF

    2SB1132G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION


    Original     		2SB1132 2SB1132 -500mA/-50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R 2SB1132L-x-TN3-T 2SB1132G-x-TN3-T OT-89 2SB1132G PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION  The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION


    Original     		2SB1132 2SB1132 -500mA -50mA) 2SB1132G-x-AB3-R OT-89 2SB1132G-x-AL3-R OT-323 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R PDF

    2SA1927

    Abstract: 05SV ra-100
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING


    OCR Scan     		2SA1927 2SA1927 100mVtyp 270Hz X10-3 05SV ra-100 PDF

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T PDF

    TIP41CL

    Abstract: TIP41CL-TA3-T f tip42c TIP41C tip41c pins TIP42C
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 TO-220 FEATURE * Complement to TIP42C


    Original     		TIP41C TIP41C O-220 TIP42C TIP41CL TIP41C-TA3-T TIP41CL-TA3-T TIP41CL TIP41CL-TA3-T f tip42c tip41c pins TIP42C PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR  DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION


    Original     		2SB1132 2SB1132 -500mA -50mA) 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R OT-89 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION


    Original     		2SB1132 2SB1132 -500mA -50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R OT-89 O-252 PDF

    2SB1132

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L


    Original     		2SB1132 OT-89 2SB1132 -500mA/-50mA) O-252 2SB1132L 2SB1132-x-AB3-R 2SB1132L-x-AB3-R 2SB1132-x-TN3-R 2SB1132L-x-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES *Low VCE sat . VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)


    Original     		2SB1132 2SB1132 -500mA/-50mA) O-252 100ms QW-R209-012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)


    Original     		2SB1132 2SB1132 -500mA/-50mA) OT-89 100nt QW-R208-016 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)


    Original     		2SB1132 2SB1132 -500mA/-50mA) OT-89 100ms QW-R208-016 PDF

    trr 30-06xx2

    Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
    Text: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex


    OCR Scan     		25-10xx2 30-06xx2 50-06xx2 50-10xx2 50-12xx2 75-10xx2 100-10XX2 100-12xx2 150-10xx2 200-10xx2 trr 30-06xx2 30-06xx2 TRR25-10XX2 II10-04L5 PDF

    TRR25-10XX2

    Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
    Text: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR


    OCR Scan     		25-10xx2 30-06xx2 50-06XX2 50-10xx2 50-12XX2 75-10x 200-10XX2 300-10xx2 10-04L5 TRR25-10XX2 TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 5012-X ISOLA DE 156 PDF

    JC5010

    Abstract: JC501 JC501Q JC501P JC501Q transistor npn, transistor, sc 115 c TRANSISTOR K 135 J 50 through hole transistor 115
    Text: DISCRETE SEMICONDUCTORS JC501 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 17 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor


    OCR Scan     		JC501 JA101. MAM259 SC-43 JC5010 JC501Q JC501P JC501Q transistor npn, transistor, sc 115 c TRANSISTOR K 135 J 50 through hole transistor 115 PDF

    MMBTA06G

    Abstract: MMBTA06L-AE3-R MMBTA06 MMBTA06-AE3-R MMBTA06L transistor marking CS
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW Lead-free: MMBTA06L Halogen-free:MMBTA06G „ ORDERING INFORMATION Normal MMBTA06-AE3-R „


    Original     		MMBTA06 350mW MMBTA06L MMBTA06G MMBTA06-AE3-R MMBTA06L-AE3-R MMBTA06G-AE3-R OT-23 QW-R206-041 MMBTA06G MMBTA06 MMBTA06-AE3-R MMBTA06L transistor marking CS PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.  FEATURES * Low Collector Saturation Voltage:


    Original     		2SB798 2SB798 -100mA 2SB798G-x-AB3-R OT-89 QW-R208-020 PDF

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


    Original     		PDF

    MMBTA05

    Abstract: MMBTA06 MMBTA06-AE3-R MMBTA06L MMBTA06L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA06L ORDERING INFORMATION Order Number Normal


    Original     		MMBTA06 350mW OT-23 MMBTA06L MMBTA06-AE3-R MMBTA06L-AE3-R QW-R206-041 MMBTA05 MMBTA06 MMBTA06-AE3-R MMBTA06L MMBTA06L-AE3-R PDF