Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 501 Search Results

    TRANSISTOR 501 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFG135 amplifier

    Abstract: BFG135 BFG135 - BFG135 MBB300
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


    Original     		PDF BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017

    BFR540

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


    Original     		PDF BFR540 BFR540 125006/03/pp16 MSB003

    BFG35

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


    Original     		PDF BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


    Original     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    BFQ34

    Abstract: transistor marking N1 BFQ34/01,112
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4


    Original     		PDF BFQ34 OT122A BFQ34/01 BFQ34/01 OT122 BFQ34 transistor marking N1 BFQ34/01,112

    BFG198

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


    Original     		PDF BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198

    TIP41C

    Abstract: TIP42C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO-220 The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES 1 TO - 252


    Original     		PDF TIP42C O-220 TIP42C TIP41C TIP42CL TIP42C-TA3-T TIP42CL-TA3-T TIP42C-TN3-R TIP42CL-TN3-R TIP42C-TN3-T TIP41C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T

    2SB1132G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA/-50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R 2SB1132L-x-TN3-T 2SB1132G-x-TN3-T OT-89 2SB1132G

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION  The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA -50mA) 2SB1132G-x-AB3-R OT-89 2SB1132G-x-AL3-R OT-323 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T

    TIP41CL

    Abstract: TIP41CL-TA3-T f tip42c TIP41C tip41c pins TIP42C
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 TO-220 FEATURE * Complement to TIP42C


    Original     		PDF TIP41C TIP41C O-220 TIP42C TIP41CL TIP41C-TA3-T TIP41CL-TA3-T TIP41CL TIP41CL-TA3-T f tip42c tip41c pins TIP42C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR  DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA -50mA) 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R OT-89 O-252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA -50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R OT-89 O-252

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


    Original     		PDF M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor

    R T O BH TRANSISTOR

    Abstract: 2SC5168 transistor CR NPN
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.


    OCR Scan     		PDF 2SC5168 2SC5168 100mV 250to800 270Hz X10-3 R T O BH TRANSISTOR transistor CR NPN

    2SA1927

    Abstract: 05SV ra-100
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING


    OCR Scan     		PDF 2SA1927 2SA1927 100mVtyp 270Hz X10-3 05SV ra-100