rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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MARKING npn TRANSISTOR 1k sot223
Abstract: 417 TRANSISTOR transistor 417 C 38 marking code transistor CZT853 CZT953
Text: Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CZT853
CZT853
CZT953
OT-223
30-January
100mA,
50MHz
MARKING npn TRANSISTOR 1k sot223
417 TRANSISTOR
transistor 417
C 38 marking code transistor
CZT953
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CZT953
Abstract: No abstract text available
Text: Central CZT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CZT953
OT-223
CZT853
400mA
21-November
100mA,
50MHz
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CZT853
Abstract: CZT953
Text: Central CZT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CZT953
CZT953
CZT853
OT-223
30-January
100mA,
50MHz
CZT853
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2n2222 2n5401 2n5551
Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
Text: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.
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14-pin
2N2222
2N2907
TPQ6600
2N2483
2N3738
TPQ6600A
2N3799
TPQ6700
2N3904
2n2222 2n5401 2n5551
TPQA05
TPQ6502
TPQ5400
2N2907 NPN Transistor
TPQ2907A
TPQ3724
TPQ2221
TPQ2222
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: - TO-3, TO-5, T 0-100 TRANSISTOR SOCKETS SOCKETS FOR TO -5 & TO-100 Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 to .020 diameter leads and .010 x .018 rectangular transistor leads.
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O-100
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BUX100
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
711DfiÂ
711005b
BUX100
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BUX100
Abstract: transistor ""
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
100mA
7110flBb
DD77647
DD776M6
BUX100
transistor ""
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BLY88A
Abstract: A41E BLY88 W1032 Paver Components
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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DQ57R27
BLY88A
to-16
BLY88A
A41E
BLY88
W1032
Paver Components
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP8N50E GENERAL DESCRIPTION PHX5N50E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP8N50E
PHX5N50E
OT186A
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK446-1000B
-SOT186
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING-SOT186A PIN QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability,
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PINNING-SOT186A
PHX4N40
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marking code e2
Abstract: BF547W transistor with marking 4266 "MARKING CODE E2" TRANSISTOR S 813 BF547 equivalent transistor A 2497 marking 28 SOT323 vhf MA 0253 000
Text: Product specification Philips Semiconductors NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation • Good thermal stability. Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the
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BF547W
OT323
BF547W
BF547.
711DflSh
07M3UD
marking code e2
transistor with marking 4266
"MARKING CODE E2"
TRANSISTOR S 813
BF547
equivalent transistor A 2497
marking 28 SOT323 vhf
MA 0253 000
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NTE74HC14
Abstract: NTE74HCt14 NTE74C14 NTE7420 NTE7421 NTE74HC11 NTE7413 NTE7410 NTE7416 NTE74C20
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate u r i NTE7411, MTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11
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NTE7410,
NTE74C10,
14-Lead
NTE74H10,
NTE74HC10,
NTE74LS10,
NTE74S10
NTE7411,
MTE74H11,
NTE74HC14
NTE74HCt14
NTE74C14
NTE7420
NTE7421
NTE74HC11
NTE7413
NTE7410
NTE7416
NTE74C20
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMÒS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK555-1OOA/B
BUK555
-100A
-100B
T0220AB
BUK555-100A/B
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transistor iqr
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GEN ER AL DESCRIPTION PHP6N60E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP6N60E
43ffiS^
T0220AB
transistor iqr
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D5414
Abstract: 7400 4-input nand gate 7400 QUAD NAND 54175 54164 nand ttl 7400 D5404 CD5432 7400 2-input nand gate 7400 signetics
Text: 11 MAXIMUM RATINGS SIGNETICS INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic consists of medium speed TTL integrated circuits. This high noise immunity fam ily was designed for general digital logic applications requiring
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24-LEAD
54158/E,
54160/E,
54161/E
54163/E,
54164/C,
54165/E
54166/E,
54170/E
D5414
7400 4-input nand gate
7400 QUAD NAND
54175
54164
nand ttl 7400
D5404
CD5432
7400 2-input nand gate
7400 signetics
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Untitled
Abstract: No abstract text available
Text: fl SIGNETICS INTEGRATED CIRCUITS 54H00 Series 74H00 Series The 54H00/74H00 logic family is high speed TTL III. These transistor-transistor logic circuits were designed for general purpose applications. They have good external noise immunity and high fan-out.
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54H00
74H00
54H00/74H00
C-14-LEAD
-16-LEAD
D-14-LEAD
54H00/C
2-In16-LEAD
16-LEAD
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TC-1628A
Abstract: TC1628 2SB1114 MF-1134
Text: DATA SHEET SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SB1114 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package
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2SB1114
2SB1114
TC-1628A
TC1628
MF-1134
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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54175
Abstract: motorola TTL 5400 series
Text: MAXIMUM RATINGS Supply Voltage - Vcc Unit +7.0 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic is a medium-speed, high noise immunity family of saturating integrated logic circuits designed
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54174/E
54175/E,
54176/C
54177/C
54178/C,
54179/E
54180/C
54181/J
54182/E,
54190/E
54175
motorola TTL 5400 series
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k426
Abstract: LD 25 V BUK426-800A transistor bu
Text: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK426-800A/B
711005t.
BUK426
-600A
-800B
PINNING-SOT199
k426
LD 25 V
BUK426-800A
transistor bu
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