JAPAN transistor
Abstract: 96-529-BD11
Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.
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2SA1036K
2SC411K
500mA
96-529-BD11)
JAPAN transistor
96-529-BD11
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transistor
Abstract: 2SC411K transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v
Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.
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2SA1036K
2SC411K
500mA
96-529-BD11)
curvesC411K
transistor
transistor 495
"General Purpose Transistor"
TRANSISTOR 493
dual npn 500ma
smt machines
500ma pnp
NPN/PNP transistor
pnp 500ma 40v
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BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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NSB1706DMW5T1G
Abstract: No abstract text available
Text: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1G
NSB1706DMW5T1G,
SC-88A
NSB1706DMW5T1/D
NSB1706DMW5T1G
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Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1G,
NSVB1706DMW5T1G
SC-88A
NSB1706DMW5T1/D
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BFT93
Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23
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BFT93
BFT93
BFR93 application note
bfr93
GHz PNP transistor
BFR93A
MSB003
transistor BFR93
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NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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W1p TRANSISTOR
Abstract: transistor w1P w1p npn SOT23 W1P W1P 65 transistor transistor w1P 97 W1p 25 TRANSISTOR BFT92 W1P 06 "W1P"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23
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BFT92
W1p TRANSISTOR
transistor w1P
w1p npn
SOT23 W1P
W1P 65 transistor
transistor w1P 97
W1p 25 TRANSISTOR
BFT92
W1P 06
"W1P"
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Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1G,
NSVB1706DMW5T1G
NSB1706DMW5T1/D
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BFR92 application note
Abstract: BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR92 PINNING NPN transistor in a plastic SOT23
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BFR92
MSB003
BFT92.
BFR92 application note
BFR92
TRANSISTOR p1p datasheet
BFT92
transistor P1P 39
TRANSISTOR p1p
BFR90 amplifier
BFR92 transistor
transistor BFR92
BFR90
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Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1
NSB1706DMW5T1,
SC-88A
NSB1706DMW5T1/D
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NSB1706DMW5T1
Abstract: transistor marking code 325
Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1
NSB1706DMW5T1,
SC-88A
NSB1706DMW5T1/D
NSB1706DMW5T1
transistor marking code 325
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54q1
Abstract: No abstract text available
Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1
NSB1706DMW5T1,
SC-88A
54q1
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marking u6
Abstract: No abstract text available
Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1
NSB1706DMW5T1,
SC-88A
NSB1706DMW5T1/D
marking u6
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marking 88A
Abstract: marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking
Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1
NSB1706DMW5T1,
SC-88A
NSB1706DMW5T1/D
marking 88A
marking code 88A
NSB1706DMW5T1
NSB1706DMW5T1G
NSB1706
u6 transistor
88a marking
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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BFR93 application note
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFR93 application note
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •
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BF550
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transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
NEC D 986
transistor NEC B 617
transistor NEC D 587
r44 marking
transistor D 2624
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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