la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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CQ 817
Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.
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EN4580
2SC4860
CQ 817
cq 0765
TRANSISTOR cq 817
ic 4580
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AO4447AL
Abstract: No abstract text available
Text: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications.
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AO4447AL
AO4447AL
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AO4447AL
Abstract: No abstract text available
Text: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications.
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AO4447AL
AO4447AL
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ic 4580
Abstract: KT 817 transistor 2SC4860 KT 817 transistor kt 801 EN4580
Text: Ordering number:EN4580 NPN Epitaxial Planar Silicon Transistor 2SC4860 UHF Converter, Local Oscillator Applications Features Package Dimensions • High cutoff frequency : fT=6.5GHz typ. · High gain : S21e2=11.5dB typ f=1GHz . · Small Cob : NF=0.65pF typ.
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EN4580
2SC4860
S21e2
2059B
2SC4860]
ic 4580
KT 817 transistor
2SC4860
KT 817
transistor kt 801
EN4580
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF10N300C
IC110
10N300C
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AON6405
Abstract: AON6405L
Text: AON6405L P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for load switch and battery protection applications.
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AON6405L
AON6405L
Dra05L
AON6405
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transistor 4580
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD20N06HD HDTMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Dcvlce TMOS POWER FET 20 AMPERES 60 VOLTS RDS on = 0-045 OHM N-Channel Enhancement-Mode Silicon Gate
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MTD20N06HD
1-OE-05
0E-04
0E-03
1-0E-02
0E-01
transistor 4580
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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4311 mosfet transistor
Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.
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2SC3164
VR61F1
MA1000
MA2000
4311 mosfet transistor
2SK2068
2sc 1027 transistor
4-071 transistor
2SK2067
S2VC
4102 transistor
s2ld
s4vb bridge rectifier
4072
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: 7 - F X series Switching Power Transistor 8a 2SC4580 NPN (TP8W45FX) O utline Dimensions Case : ITO-3P 5.5'O ’ 1 5 .0 ^ 3 ¿ 1 3 ±0.2 Date code o°u£«S£- @ r? "04580 EIAJ No. " B C I T O max 3.3-° 3 12.5ÌI 2.1MAX I 12.1 max = 0.2 J.0. 1.0*«-»
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2SC4580
TP8W45FX)
fl21I13fl7
0Q3S13
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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CF-221
Abstract: 50B4DIN41867
Text: TELEFUNKEN ELECTRONIC TTHLltFQIlMKiKl electronic QIC t • T - 2 / - 2 S— C F 221 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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50B4DIN41867
569-GS
CF-221
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transistor g23 mosfet
Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
Text: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;
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000530b
569-GS
transistor g23 mosfet
3680 MOSFET
transistor g23
CF-922
1SS140
marking code wa sot 143
CF922
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v628
Abstract: CFK22 d200pa
Text: SIC D TELEFUNKEN ELECTRONIC TilUKFdDMKllM electronic • fl^SOOU 0005401 4 T - 3/- Z S~ CFK22 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common Gate 1 configuration;
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CFK22
569-GS
v628
CFK22
d200pa
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TRANSISTOR BC 707
Abstract: CFK40 transistor bf 274 BF 273 transistor
Text: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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0Q05M13
CFK40
569-GS
TRANSISTOR BC 707
CFK40
transistor bf 274
BF 273 transistor
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transistor bc 930
Abstract: transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF
Text: TELEFUNKEN ELECTRONIC filC D • CF 930 Marked with: CF 5 YHILilPQJMIKiM electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: QDDSBfifiO r- 3 / -zr Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
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ft-11
569-GS
000s154
hal66
if-11
transistor bc 930
transistor bc 248
transistor BC 247
cf930
BC 247 sot-23
D200-PA
E33681
HAT2195WP
BC 247 b transistor
SOT-23 marking BF
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transistor bf 271
Abstract: CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c
Text: filC D TELEFUNKEN ELECTRONIC • fiTSGDTb OGOSMll 2 ■ ALCG T-3/-2i> M electronic CFK30 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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CFK30
569-GS
transistor bf 271
CFK30
marking code CFK
sot-23 MARKING CODE 0s
transistor g23 mosfet
3704 transistor
bc238c
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CF300
Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
Text: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
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50B4DIN41867
569-GS
CF300
CF-300
telefunken mosfet
marking code g1s
transistor bf 222
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Transistor 4515
Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Text: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
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029426A
50B4DIN41867
569-GS
000s154
hal66
Transistor 4515
CF300
transistor D 4515
lm 4580
Telefunken u 237
sot-23 MARKING CODE ZA
SY 180/4
TRANSISTOR BC 414
W-25
CF-300
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TRANSISTOR BC 814
Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Text: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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CFK10
569-GS
TRANSISTOR BC 814
TRANSISTOR "BC 258"
transistor BF 257
ci 4580
MARKING CFK
CFk10
BC 251 transistor
TRANSISTOR BC 256
Telefunken u 257
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