C7021
Abstract: PT600T C7035
Text: v r e DATE : ‘REP4RED BY: 2’ “-” 1 lsPECNO. DG-953054 1 / 1 1 PAGE ELECTRONIC COMPONENTS GROUP REP E E~TATIVE,DIVISION SHARP CORPORATION o SPECIFICATION -w, ? O u“DEVICES.~IV. {/tFl/{44tl/ “ ‘“ 4 “ ‘-> < \ ~ DEVICE SPECIFICATION FOR PHOTO-TRANSISTOR
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DG-953054
44tl/
PT60C
C7021
PT600T
C7035
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Untitled
Abstract: No abstract text available
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TD9944
125pF
DSFP-TD9944
A022309
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Untitled
Abstract: No abstract text available
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TD9944
125pF
DSFP-TD9944
A012009
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44TG
Abstract: TD9944 TD9944TG-G
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TD9944
125pF
DSFP-TD9944
A041309
44TG
TD9944
TD9944TG-G
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Untitled
Abstract: No abstract text available
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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PDF
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TD9944
125pF
MS-012,
DSFP-TD9944
A020508
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Untitled
Abstract: No abstract text available
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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PDF
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TD9944
125pF
DSFP-TD9944
A091608
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Untitled
Abstract: No abstract text available
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TD9944
125pF
MS-012,
F071408.
DSFP-TD9944
A081308
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power
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kb53R31
BFW92
BFW92/02
MEA393
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and
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CZT2222A
CZT2222A
OT-223
150mA,
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44t transistor
Abstract: No abstract text available
Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 15 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~ *th J C DC, pro Zweig / per arm
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44t transistor
Abstract: No abstract text available
Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm
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CZT2222A
Abstract: vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t
Text: Central“ C Z T2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The C E N TR A L SE M IC O N D U C T O R CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and
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CZT2222A
CZT2222A
150mA,
vqe 14 E
vqe 14
vqe 71
44t transistor
transistor 44t
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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222203028109
Abstract: IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013
Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS BLF547 INTERNATIONAL FEATURES SbE 7110fl2b 00414012 flJ3 BIPHIN T> PIN CONFIGURATION 7 - 3 * ? - ¡ S ' • • • • High power gain Easy power control Good thermal stability
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BLF547
OT262A2
711Gfl2b
T-37-at
MBA379
URB012
222203028109
IR802
transistor PH7n
vogt
44t transistor
2222 kn a
ceramic trimmer capacitor
International Power Sources
ph7n
tl 4013
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transistor 2SA15
Abstract: 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15
Text: Ordering number: EN 2 4 3 8 A 2SA1539/2SC3954 N0.2438A PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications i Applications . High-definition CRT display video output, wide-band amp Features . High fT: f\p=500MHz
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2SA1539/2SC3954
500MHz
120Vmin
SC3954
39/2SC
1305047b
transistor 2SA15
2sa153
2SA15
2SA1539
2SC3954
QDSD475
SA15
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2SK2228
Abstract: Transistor 3202 1 A 60
Text: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
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QQE33Ã
2SK2228
T05HIBA
O-22QAB
O-220
50URCE
O-220FL
00E3b43
O-220SM
Transistor 3202 1 A 60
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Untitled
Abstract: No abstract text available
Text: HD66330T TFT Driver -(6 4 -Level Gray Scale Driver fo r TFT Liquid Crystal Display) —Preliminary — Description Features The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The
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HD66330T
HD66330T,
HD66330T
64-level
Y1-Y192
Y1-192
44Tfc
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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2SK2235
Abstract: DDS3400 44t transistor DDS34
Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
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DDS3400
2SK2235
300juA
20kfi)
O-22QAB
O-220
50URCE
O-220FL
00E3b43
44t transistor
DDS34
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SAA 7010
Abstract: 12533-5 TL/H/12533-6 LMC6009 LMC6009MT LMC6009MTX MTD48 44t Short Circuit Protection RRD-B30M56 BEL 640 transistor
Text: ADVANCE INFORMATION Semiconductor April 1996 LMC6009 9 Channel Buffer Amplifier for TFT-LCD General Description Features The LMC6009 is a CMOS integrated circuit that buffers 9 reference voltages for gamma correction in a Thin Film Transistor Liquid Crystal Display TFT-LCD . Guaranteed to
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LMC6009
LMC6009
bS0112M
01G17bG
SAA 7010
12533-5
TL/H/12533-6
LMC6009MT
LMC6009MTX
MTD48
44t Short Circuit Protection
RRD-B30M56
BEL 640 transistor
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Untitled
Abstract: No abstract text available
Text: HD6631OT- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.
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HD6631OT---------------
HD66310T
HD66310T00)
HD66310T0015)
HD66310T
04iaclQB
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Untitled
Abstract: No abstract text available
Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6
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BSP318S
OT-223
Q67000-S127
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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