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    TRANSISTOR 431 G SMD Search Results

    TRANSISTOR 431 G SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 431 G SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF 2N7640-GA 2N7640 03E-47 72E-28 68E-10 72E-09 00E-02 2N7640-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF 2N7640-GA 2N7640 03E-47 72E-28 68E-10 72E-09 00E-02 2N7640-GA

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    transistor smd ba rn

    Abstract: LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND
    Text: Semiconductor LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized pack­


    OCR Scan     		PDF LM431 63Sn/37Pb BPA04XXX MO-211, BPA04AFA transistor smd ba rn LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND

    mb 428 ic data

    Abstract: 2K28 lg smd transistor smd transistor ng ha k206 K206 transistor
    Text: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50X DESCRIPTION BUK206-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


    OCR Scan     		PDF BUK202-50X BUK206-50X 100tn mb 428 ic data 2K28 lg smd transistor smd transistor ng ha k206 K206 transistor

    SIEMENS tle 420

    Abstract: No abstract text available
    Text: SIEMENS 3-A DC Motor Driver TLE 5204 Overview SPT IC 1 Features • • • • • • • Output current ± 3 A I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is


    OCR Scan     		PDF Q67000-A9177 P-T0220-7-1 Q67006-A9234 P-T0220-7-8 fl23SbDS G1D3704 D103705 SIEMENS tle 420

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 5-V Low-Drop Voltage Regulator TLE 4275 Preliminary Data Features • • • • • • • • Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V0 = 1 V Very low-drop voltage Short-circuit-proof


    OCR Scan     		PDF P-T0252-5-1 Q67006-A9354 Q67006-A9343 P-T0263-5-1 P-T0220-5-11 Q67000-A9342

    SmD TRANSISTOR a77

    Abstract: smd marking code SSs
    Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138


    OCR Scan     		PDF BSS138 OT-23 Q67000-S566 Q67000-S216 E6327 E6433 fopu22 S35bQ5 Q133777 SQT-89 SmD TRANSISTOR a77 smd marking code SSs

    AC14

    Abstract: S17 SMD SMD Transistor 431 ac
    Text: NATIONAL SEMICOND LOGIC blE ]> • b501122 DG747b7 744 T-n- 03 National mm Semiconductor z NSC1 i 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The ’AC14 contains six inverter gates each with a Schmitt trigger input. The 'AC14 contains six logic inverters which


    OCR Scan     		PDF b501122 DG747b7 54AC/74AC14 125-C AC14 S17 SMD SMD Transistor 431 ac

    SMD Transistor 431 ac

    Abstract: No abstract text available
    Text: SH National Æm Semiconductor 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The ’AC14 contains six inverter gates each with a Schmitt trigger input. The ’AC14 contains six logic inverters which accept standard CMOS input signals and provide standard


    OCR Scan     		PDF 54AC/74AC14 SMD Transistor 431 ac

    BTS 425

    Abstract: bts 425 l1 BTS 433 426L1 BTS425L1 tqs16 D2528 BTS 437
    Text: SIEMENS PROFET BTS425L1 Smart Highside Power Switch Features Product Summary • • • • • • • Overvoltage protection W b AZ) Operating voltage On-state resistance Load current (ISO) Vbb(on) Ro n Current limitation /L(SCr) • • • • • Overload protection


    OCR Scan     		PDF BTS425L1 O-22QAB/Ü E3043 BTS425L1 Q67060-S6100-A4 BTS 425 bts 425 l1 BTS 433 426L1 tqs16 D2528 BTS 437

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TLE 4476 GM D u a l L o w -D ro p V o lta g e R e g u la to r T a rg e t D a ta Features • • • • • • • • • • • Output 1: 250 mA; 3.3 V ± 4 % Output 2: 330 mA; 5.0 V ± 4 % Enable input for output 2 Low quiescent current in OFF state


    OCR Scan     		PDF Q67006-A9362 P-T0252-5-1 0235bG5 fl235bOS

    TRANSISTOR SMD zwa

    Abstract: 425L1 zwa smd SMD diode JB bts 425 l1 smd zener diode code n0 SMD Transistor g14 BTS425 JB OL4 A2723
    Text: • 4 S 3 5 Í.0 5 00=12717 001 ■ SIEM EN S PROFET BTS 425 L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features * * * * * * * * * * * * Overload protection


    OCR Scan     		PDF 0235bDS components161 systems17> TRANSISTOR SMD zwa 425L1 zwa smd SMD diode JB bts 425 l1 smd zener diode code n0 SMD Transistor g14 BTS425 JB OL4 A2723

    XC+872

    Abstract: No abstract text available
    Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current


    OCR Scan     		PDF 10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872

    SMD Transistor g14

    Abstract: BTS 433
    Text: •I Ö23SLGS □□C I2717 001 ■ SIEMENS PROFET BTS425L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation


    OCR Scan     		PDF I2717 BS425L BTS425L1 E3043 Q67060-S6100-A4 SMD Transistor g14 BTS 433