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    TRANSISTOR 40050 Search Results

    TRANSISTOR 40050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 40050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


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    PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    Wacker Silicones p12

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
    Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available


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    5889

    Abstract: pg9 gland AWG16 DC24V DIN 40050 Part 9 IEC 529 CA145 powder level sensor circuit diagram
    Text: LevelSensorNR100 Description Level Sensor NR 100 is designed to monitor liquids, granules, and powder. It is especially suitable for aggressive media and foodstuffs. Available as MIN or MAX monitor. Features ● ● ● ● ● MIN or MAX sensor transistor output


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    PDF LevelSensorNR100 20-turn 5889 pg9 gland AWG16 DC24V DIN 40050 Part 9 IEC 529 CA145 powder level sensor circuit diagram

    m27x1

    Abstract: 1015 TRANSISTOR CuZn39Pb3 transistor 1015 0Z051Z003009 0Z051Z003010 0Z051Z003012 transistor 936 DIN 40050 Part 9 IEC 529 ETFE material
    Text: LevelSensorNR60 Description Level Sensor NR 60 is designed to monitor water, oils and fuel. It may also be used in automatic filling systems. Features ● ● ● ● invasive mounting transistor output minimum or maximum sensor self-test function MIN sensor


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    PDF LevelSensorNR60 M14x1 M18x1 M27x1 0Z051Z003012 M27x1, 0Z051Z003011 0Z031Z010001 0Z051Z003010 m27x1 1015 TRANSISTOR CuZn39Pb3 transistor 1015 0Z051Z003009 0Z051Z003010 0Z051Z003012 transistor 936 DIN 40050 Part 9 IEC 529 ETFE material

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


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    PDF HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS

    9412 transistor

    Abstract: working principle of encoder
    Text: Incremental Encoder Series 58 • Meets industrial standards · Synchro flange or clamping flange · Up to 20000 ppr at 5000 slits · 10 V . 30 V with short circuit protected push-pull transistor output · 5 V; RS 422 · Comprehensive accessory line · Cable or connector


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    PDF RS422 9412 transistor working principle of encoder

    Untitled

    Abstract: No abstract text available
    Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network


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    PDF AUR500 ASI10550

    Untitled

    Abstract: No abstract text available
    Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network


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    PDF AUR500 21EFERENCE AUR500

    J31 transistor

    Abstract: f j31
    Text: SD1474 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI SD1474 is acommom emitter device, designed for pulsed applications in the 400-500 MHz frequency range. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I • Emitter Ballasted


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    PDF SD1474 SD1474 J31 transistor f j31

    S6R-5-C200-N

    Abstract: transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p
    Text: UNIVERSAL MIDI SENSORS 50 x 50 mm COMPACT SENSORS • • • • New background and foreground suppression models Free voltage versions with relay output 10-30 Vdc version with transistor output Standard cable or M12 connection S6 SERIES The S6 series, thanks to the excellent detection performances and the variety of


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    PDF 50x50 S6R-5-M50-P S6R-5-M50-N S6R-5-N20-P S6R-5-N20-N S6-5-F20 S6R-5-F20-P S6R-5-F20-N S6T-5-F20-P S6-5-G20 S6R-5-C200-N transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p

    AUR500

    Abstract: ASI10550
    Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C FULL R 4X.060 R C B E FEATURES: • Internal Input Matching Network • PG = 9.5 dB at 500 W/500 MHz


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    PDF AUR500 AUR500 03ERENCE ASI10550

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    2sb753

    Abstract: No abstract text available
    Text: TO SH IBA 2SB753 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm High Collector Current : 10 = —7A Low Collector Saturation Voltage


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    PDF 2SB753 2SD843. --100V, 2sb753

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    MK96-VP01

    Abstract: No abstract text available
    Text: Flow Controls • Signal processor for - insertion style sensors - in-line sensors • 18 mm wide terminal housing • Finger protection according to VGB 4 and VDE 0470, Part 1 • Two complementary, short-circuit protected pnp/npn transistor outputs • Simple switch set-point calibration


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    PDF 529/DIN MK96-VP01 MK96-VN01

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. IN D E X M A R K TOP (B O T T O M ) FEATURES • High power gain:Gpe>8.4dB


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    PDF 2SK2974 2SK2974 450MHz 30dBm

    Untitled

    Abstract: No abstract text available
    Text: s s e r v i;a o r '- iC 3 v .- sr: ' : o -r ^ TN3725A MMPQ3725 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings TA = 25°C unless otherwise noted


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    PDF TN3725A MMPQ3725 SOIC-16 TN3725A

    NPN power transistor 15A amperes

    Abstract: npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11403508 DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex
    Text: 7 2 9 4 6 2 1 POWEREX INC m t/B iE X DËTJ 75T4L.21 0D057DS 3 J~'o • r - Í 3 ~ » ? DA11/DB12 NPN Power Switching Darlington Transistor Sets Powerex, Inc., H illls Street, Youngwood, Pennsylvania 15697 412 925-7272 300-350-800 Amperes/ 400-500 Volts Features:


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    PDF 0D057DS DA11/DB12 DA11403508 Amperes/400-500 NPN power transistor 15A amperes npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex

    2482 TRANSISTOR

    Abstract: X09321
    Text: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR T OÆ9?21 400-500 MHz TOM 9321, 4 Pin TO -8 T4 TON9321, 4 Pin Surface Mount (SM3) B X09321, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Broad Tuning Range Operating Case Temp. -40 °C to + 85 °C


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    PDF ON9321, X09321, 2482 TRANSISTOR X09321