MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Wacker Silicones p12
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available
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5889
Abstract: pg9 gland AWG16 DC24V DIN 40050 Part 9 IEC 529 CA145 powder level sensor circuit diagram
Text: LevelSensorNR100 Description Level Sensor NR 100 is designed to monitor liquids, granules, and powder. It is especially suitable for aggressive media and foodstuffs. Available as MIN or MAX monitor. Features ● ● ● ● ● MIN or MAX sensor transistor output
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LevelSensorNR100
20-turn
5889
pg9 gland
AWG16
DC24V
DIN 40050 Part 9 IEC 529
CA145
powder level sensor circuit diagram
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m27x1
Abstract: 1015 TRANSISTOR CuZn39Pb3 transistor 1015 0Z051Z003009 0Z051Z003010 0Z051Z003012 transistor 936 DIN 40050 Part 9 IEC 529 ETFE material
Text: LevelSensorNR60 Description Level Sensor NR 60 is designed to monitor water, oils and fuel. It may also be used in automatic filling systems. Features ● ● ● ● invasive mounting transistor output minimum or maximum sensor self-test function MIN sensor
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LevelSensorNR60
M14x1
M18x1
M27x1
0Z051Z003012
M27x1,
0Z051Z003011
0Z031Z010001
0Z051Z003010
m27x1
1015 TRANSISTOR
CuZn39Pb3
transistor 1015
0Z051Z003009
0Z051Z003010
0Z051Z003012
transistor 936
DIN 40050 Part 9 IEC 529
ETFE material
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capacitor 10uF/63V
Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0405-175
EG-01-DS10A
429-HVVi
capacitor 10uF/63V
ds10a
capacitor 100uF 50V
capacitor 1206 63V
hex head screws
10uf 63v capacitor
AB-45
banana socket datasheet
diode gp 429
SMD 1206 RESISTOR 100 OHMS
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9412 transistor
Abstract: working principle of encoder
Text: Incremental Encoder Series 58 • Meets industrial standards · Synchro flange or clamping flange · Up to 20000 ppr at 5000 slits · 10 V . 30 V with short circuit protected push-pull transistor output · 5 V; RS 422 · Comprehensive accessory line · Cable or connector
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RS422
9412 transistor
working principle of encoder
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Untitled
Abstract: No abstract text available
Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network
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AUR500
ASI10550
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Untitled
Abstract: No abstract text available
Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network
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AUR500
21EFERENCE
AUR500
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J31 transistor
Abstract: f j31
Text: SD1474 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI SD1474 is acommom emitter device, designed for pulsed applications in the 400-500 MHz frequency range. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I • Emitter Ballasted
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SD1474
SD1474
J31 transistor
f j31
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S6R-5-C200-N
Abstract: transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p
Text: UNIVERSAL MIDI SENSORS 50 x 50 mm COMPACT SENSORS • • • • New background and foreground suppression models Free voltage versions with relay output 10-30 Vdc version with transistor output Standard cable or M12 connection S6 SERIES The S6 series, thanks to the excellent detection performances and the variety of
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50x50
S6R-5-M50-P
S6R-5-M50-N
S6R-5-N20-P
S6R-5-N20-N
S6-5-F20
S6R-5-F20-P
S6R-5-F20-N
S6T-5-F20-P
S6-5-G20
S6R-5-C200-N
transistor C200
S6R-5-M50-P
s6-5-M25
S6-1-C90
s6-5-c200
S6-1-C200
datasensor s6r-5-c200-p
S6-5-C90
datasensor s6t-5-m25-p
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AUR500
Abstract: ASI10550
Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C FULL R 4X.060 R C B E FEATURES: • Internal Input Matching Network • PG = 9.5 dB at 500 W/500 MHz
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AUR500
AUR500
03ERENCE
ASI10550
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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2sb753
Abstract: No abstract text available
Text: TO SH IBA 2SB753 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm High Collector Current : 10 = —7A Low Collector Saturation Voltage
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2SB753
2SD843.
--100V,
2sb753
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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MK96-VP01
Abstract: No abstract text available
Text: Flow Controls • Signal processor for - insertion style sensors - in-line sensors • 18 mm wide terminal housing • Finger protection according to VGB 4 and VDE 0470, Part 1 • Two complementary, short-circuit protected pnp/npn transistor outputs • Simple switch set-point calibration
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529/DIN
MK96-VP01
MK96-VN01
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. IN D E X M A R K TOP (B O T T O M ) FEATURES • High power gain:Gpe>8.4dB
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2SK2974
2SK2974
450MHz
30dBm
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Untitled
Abstract: No abstract text available
Text: s s e r v i;a o r '- iC 3 v .- sr: ' : o -r ^ TN3725A MMPQ3725 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings TA = 25°C unless otherwise noted
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TN3725A
MMPQ3725
SOIC-16
TN3725A
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NPN power transistor 15A amperes
Abstract: npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11403508 DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex
Text: 7 2 9 4 6 2 1 POWEREX INC m t/B iE X DËTJ 75T4L.21 0D057DS 3 J~'o • r - Í 3 ~ » ? DA11/DB12 NPN Power Switching Darlington Transistor Sets Powerex, Inc., H illls Street, Youngwood, Pennsylvania 15697 412 925-7272 300-350-800 Amperes/ 400-500 Volts Features:
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0D057DS
DA11/DB12
DA11403508
Amperes/400-500
NPN power transistor 15A amperes
npn darlington transistor 200 watts
npn darlington transistor 150 watts
D62T
DA11503008
DB12408005
DB12508004
SWITCHING TRANSISTOR 144
amerex
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2482 TRANSISTOR
Abstract: X09321
Text: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR T OÆ9?21 400-500 MHz TOM 9321, 4 Pin TO -8 T4 TON9321, 4 Pin Surface Mount (SM3) B X09321, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Broad Tuning Range Operating Case Temp. -40 °C to + 85 °C
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ON9321,
X09321,
2482 TRANSISTOR
X09321
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