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    TRANSISTOR 3CA Search Results

    TRANSISTOR 3CA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3CA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3CA1837

    Abstract: 3DA4793
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR PNP FEATURES . High Transition Frequency : fT=70MHZ(Typ) . Complementary to 3DA4793 . Collector Power Dissipation PCM : 2W (Tamb=25℃)


    Original     		PDF O-220F 3CA1837 70MHZ 3DA4793 -230V, -100mA -500mA, -50mA 3DA4793

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES . High Transition Frequency : fT=100MHZ(Typ) . Complementary to 3CA1837 . Collector Power Dissipation PCM : 2W (Tamb=25℃)


    Original     		PDF O-220F 3DA4793 100MHZ 3CA1837 100mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3CA753 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power dissipation 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF O-251/TO-252-2L 3CA753 O-251 O-252-2L -10mA -500mA -200mA -30mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 3DA4793 z Collector Power Dissipation 2. COLLECTOR PCM : 2W (Tamb=25.) 20 W (Tcase=25.) 3. EMITTE


    Original     		PDF O-220F 3CA1837 3DA4793 -230V, -100mA -500mA, -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO – 126 FEATURES z High Current z Low Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-126 3CA8772 -10mA 10MHz

    3CA1837

    Abstract: 3DA4793
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE


    Original     		PDF O-220F 3DA4793 3CA1837 100mA 500mA, 3CA1837 3DA4793

    3CA772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA772 TRANSISTOR PNP TO – 126 FEATURES z High Current z Low Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-126 3CA772 -10mA 10MHz 3CA772

    3CA1837

    Abstract: 3DA4793 Transistor 150 A pnp
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR PNP FEATURES z Complementary to 3DA4793 z Collector Power Dissipation 1. BASE 2. COLLECTOR PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 3. EMITTE


    Original     		PDF O-220F 3CA1837 3DA4793 -230V, -100mA -500mA, -50mA 3CA1837 3DA4793 Transistor 150 A pnp

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3CA1943 TO – 3P TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 3CA1943 -50mA -120V -800mA

    3CA8772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF O-126 3CA8772 O-126 10MHz 3CA8772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3CA2050 TO – 220F TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220F 3CA2050 -10mA -180V -500mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: 3CA753 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30


    Original     		PDF O-251/TO-252-2L 3CA753 O-251 O-252-2L -10mA -500mA -200mA -30mA

    3CA8772

    Abstract: TO126 package t 0433 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		PDF O-126 3CA8772 O--126 -100A 290TYP 090TYP 3CA8772 TO126 package t 0433 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3DA4793 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Ta=25.) 20 W (Tc=25.) 2. COLLECTOR 3. EMITTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220F 3DA4793 3CA1837 100mA 500mA,

    transistor TO-126 Outline Dimensions

    Abstract: to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126
    Text: TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃


    Original     		PDF O-126 3CA8772 O--126 -100A 290TYP 090TYP transistor TO-126 Outline Dimensions to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126

    700B

    Abstract: AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E
    Text: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD57018-E Hz/28 PowerSO-10RF PowerSO-10RF. 700B AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E

    AN1294

    Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description


    Original     		PDF PD57030-E PowerSO-10RF PowerSO-10RF. AN1294 J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E

    PD57006-E

    Abstract: SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30
    Text: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD57006-E PowerSO-10RF PowerSO-10RF. PD57006-E SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30

    PD55025-E

    Abstract: PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841
    Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


    Original     		PDF PD55025-E PD55025S-E PowerSO-10RF PowerSO-10RF. PD55025-E PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    QM30DY-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • 1C • V cex • hFE Collector current. 30A Collector-emitter voltage. 600V DC current gain.75


    OCR Scan     		PDF QM30DY-H E80276 E80271 QM30DY-H