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    TRANSISTOR 3904 Search Results

    TRANSISTOR 3904 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3904 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD Transistor 070 R

    Abstract: PZT3904 PZT3906 smd 3904 TRANSISTOR
    Text: PZT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3904 3904 SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS PZT3906 APPLICATIONS


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    PZT3904 OT-223 PZT3906 OT-223 SMD Transistor 070 R PZT3904 PZT3906 smd 3904 TRANSISTOR PDF

    3904

    Abstract: KST3903 1A marking FAIRCHILD SOT-23 MARK 30 KST3904 3904 SOT23 MARKING 1Y
    Text: KST3903/3904 KST3903/3904 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-23 Absolute Maximum Ratings Ta=25°C unless otherwise noted 1. Base 2. Emitter 3. Collector Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage


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    KST3903/3904 OT-23 3904 KST3903 1A marking FAIRCHILD SOT-23 MARK 30 KST3904 3904 SOT23 MARKING 1Y PDF

    3904 npn

    Abstract: 3904 KST3903 KST3904 KST3904 sot-23 marking code SS SOT23 transistor TRANSISTOR MARKING CODE ss TRANSISTOR 3904 ic 5ma transistor 3904 SOT-23
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -40 -6 -200 350 150 V V V mA mW VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


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    KST3903/3904 OT-23 KST3903 KST3904 3904 npn 3904 KST3903 KST3904 KST3904 sot-23 marking code SS SOT23 transistor TRANSISTOR MARKING CODE ss TRANSISTOR 3904 ic 5ma transistor 3904 SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -60 -40 -6 -200 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


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    KST3903/3904 OT-23 KST3903 KST3904 PDF

    VPS05604

    Abstract: No abstract text available
    Text: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C


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    3904PN VPS05604 3904PN Q62702-C OT-363 EHP00757 EHP00760 VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


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    LM96163 LM96163 2N3904, PDF

    transistor marking 1y

    Abstract: HB573
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    KST3903/3904 OT-23 KST3903 KST3904 transistor marking 1y HB573 PDF

    3904 npn

    Abstract: KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    KST3903/3904 sot-23 10iiA, 10ftA, 71b4ms 0Q2S11U 3904 npn KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR PDF

    Untitled

    Abstract: No abstract text available
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    KST3903/3904 KST3903 KST3904 PDF

    Transistor 3904

    Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


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    KST3903/3904 OT-23 KST3903 KST3904 Transistor 3904 3904 npn 3904 SOT-23 sot 23 mark kst PDF

    Untitled

    Abstract: No abstract text available
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    KST3903/3904 OT-23 KST3903 KST3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N3903/3904 625mW 2N3903 2N3904 PDF

    2N3904

    Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
    Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N3903/3904 625mW 2N3904 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S PDF

    3904

    Abstract: transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904
    Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ceo = 4 0 V • Collector Dissipation: Pc m ax =625m W TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


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    100MHz 3904 transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904 PDF

    3904 npn

    Abstract: KST3903 KST3904 FAIRCHILD SOT-23 MARK 1a
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation


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    KST3903/3904 OT-23 KST390 300ns, KST3903 KST3904 3904 npn KST3904 FAIRCHILD SOT-23 MARK 1a PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    TRANSISTOR 2N 3904

    Abstract: 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904
    Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1 Characteristic Symbol C ollector-Base Vbltage C ollector-Em itter Voltage


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    625mW Cut30 100MHz TRANSISTOR 2N 3904 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904 PDF

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


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    14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a PDF

    transistor 2n

    Abstract: 3904
    Text: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor


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    2N3904 15000kHz 500rr transistor 2n 3904 PDF

    transistor 2N 3904

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most


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    14-pin TPQA05 TPQ2222A TPQ6427 TPQA06 TPQ2907 TPQ5401 TPQA56 TPQ2907A TPQ3906 transistor 2N 3904 PDF

    3904 NPN

    Abstract: KST3904
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C ollecto r-B a se Voltage C o llecto r-E m itte r V oltage Em itter-Base V oltage Symbol Rating VcBO VcEO -6 0 -4 0 -6 -2 0 0


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    KST3903/3904 OT-23 KST3903 KST3904 3904 NPN PDF

    2N3904

    Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903
    Text: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage


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    N3903/3904 -62Sm 100mA 100MHz 2N3903/3904 2N3904 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    BT3904

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT3903 me q 7 cib 4],42 GGG7Et.Q t> | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR I SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Coffector-Emitter Voltage Emitter-Base Voltage


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    MMBT3903 OT-23 BT3904 PDF