TRANSISTOR 390 Search Results

TRANSISTOR 390 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 390 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
2SA2160 Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series	Original	O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).	Original	2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044	PDF
FC155 Abstract: No abstract text available Text: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one	Original	EN5063 FC155 FC155] FC155	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
FC155 Abstract: No abstract text available Text: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one	Original	EN5063 FC155 FC155] FC155	PDF
2SB1424 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).	Original	2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044	PDF
transistor marking 1y Abstract: HB573 Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	KST3903/3904 OT-23 KST3903 KST3904 transistor marking 1y HB573	PDF
3904 npn Abstract: KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	KST3903/3904 sot-23 10iiA, 10ftA, 71b4ms 0Q2S11U 3904 npn KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR	PDF
Untitled Abstract: No abstract text available Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	KST3903/3904 KST3903 KST3904	PDF
Transistor 3904 Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation	OCR Scan	KST3903/3904 OT-23 KST3903 KST3904 Transistor 3904 3904 npn 3904 SOT-23 sot 23 mark kst	PDF
Untitled Abstract: No abstract text available Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	KST3903/3904 OT-23 KST3903 KST3904	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2N3906 Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906 Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage	OCR Scan	2N3905/3906 625mW 2N3906 Widths300 -30-SO DD2S024 transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906	PDF

IMX17 Abstract: 2SD1484K dual transistor Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two 2SD1484K chips in an SMT package. Mounting possible with SMT3 automatic mounting machine. Transistor elements are independent, eliminating interference. High collector current. Ic=500mA	Original	IMX17 2SD1484K 500mA OT-26 QW-R215-001 IMX17 dual transistor	PDF
DUAL TRANSISTOR Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two MMBT2907A chips in an SMT package. Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA EQUIVALENT CIRCUITS	Original	IMT17 MMBT2907A -500mA IMT17L-AG6 IMT17G-AG6-R OT-26 QW-R215-006 DUAL TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2N3903/3904 625mW 2N3903 2N3904	PDF
2N3904 Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2N3903/3904 625mW 2N3904 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S	PDF
Untitled Abstract: No abstract text available Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two 2SD1484K chips in an SMT package. Mounting possible with SMT3 automatic mounting machine. Transistor elements are independent, eliminating interference. High collector current. Ic=500mA	Original	IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz	PDF
transistor pnp 3906 Abstract: transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 2N3906 3906 pnp 3906 TRANSISTOR Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: Veto* 40V • Collector DiMipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2N3905/3906 625mW 2N3906 transistor pnp 3906 transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 3906 pnp 3906 TRANSISTOR	PDF
RB521S-30 Abstract: UML12N Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode	Original	UML12N 2SC4617and RB521S-30 SC-88A UML12N	PDF
BFT93 Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23	Original	BFT93 BFT93 BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93	PDF
NEC 2403 Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614 Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.	Original	2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES High breakdown voltage and high current. BVCEO= -80V, Ic = -1A Good hFE linearity.	Original	2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017	PDF

TRANSISTOR 390 Search Results

TRANSISTOR 390 Result Highlights (5)

TRANSISTOR 390 Datasheets Context Search

MN1280

2SA2160

Untitled

FC155

oz960

FC155

2SB1424

transistor marking 1y

3904 npn

Untitled

Transistor 3904

Untitled

la 4440 amplifier circuit diagram 300 watt

2N3906

IMX17

DUAL TRANSISTOR

Untitled

2N3904

Untitled

transistor pnp 3906

RB521S-30

BFT93

NEC 2403

Untitled