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    TRANSISTOR 371 Search Results

    TRANSISTOR 371 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 371 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    npn transistor 433 Mhz

    Abstract: S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MPSA06 Features l NPN Small Signal Transistor 625 mW NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56


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    MPSA06 MPSA56 100mA, 100mA 100MHz npn transistor 433 Mhz S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170 PDF

    transistor 471A

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY avalanche diode SLA4010 471A STA301A pnp darlington array npn darlington array AVALANCHE TRANSISTOR PNP avalanche transistor
    Text: Transistor array with built-in avalanche diode SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A, 460C, 471A, 475A, 481A, 485A, SDC03, 04, 0 6 The Darlington transistor chip with a built-in avalanche diode is a planar type monolithic Darlington transistor chip having


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    SLA4010, STA301A, SDC03, transistor 471A pnp DARLINGTON TRANSISTOR ARRAY avalanche diode SLA4010 471A STA301A pnp darlington array npn darlington array AVALANCHE TRANSISTOR PNP avalanche transistor PDF

    Transistor 2N2219A

    Abstract: 2N2219A
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 SWITCHING TRANSISTOR JAN, JANTX, JANTXV Features • • • • • 2N2219A Meets MIL 19500 /251 Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar Transistor


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    2N2219A Transistor 2N2219A 2N2219A PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    ZO 103 MA 75 623

    Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
    Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    2SC5008 2SC5008 ZO 103 MA 75 623 ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452 PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    SMD marking code 55B

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


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    PSMN005-55B; PSMN005-55P PSMN005-55P SMD marking code 55B PDF

    philips ferroxcube 4c6

    Abstract: BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1


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    BLF278 OT262A1 philips ferroxcube 4c6 BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36 PDF

    BLF348

    Abstract: MGP231 VHF transmitter circuit atc 17-33 RF push pull power amplifier vhf linear amplifier MGP232 BFL348
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor FEATURES BLF348 PIN CONFIGURATION • High power gain


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    BLF348 OT262 BLF348 MGP231 VHF transmitter circuit atc 17-33 RF push pull power amplifier vhf linear amplifier MGP232 BFL348 PDF

    philips Trimmers 60 pf

    Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor


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    BLF278 SC08a OT262A1 philips Trimmers 60 pf trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of 1996 Oct 21 2003 Sep 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES


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    M3D091 BLF278 OT262A1 OT262A1 SCA75 613524/04/pp23 PDF

    2222 031 capacitor philips

    Abstract: BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D099 BLV861 UHF linear push-pull power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861


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    M3D099 BLV861 SCA57 127047/00/05/pp12 2222 031 capacitor philips BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139 PDF

    c38 transistor

    Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor


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    BLF378 SC08a OT262A1 c38 transistor capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor PDF

    2222 809 09006 capacitor

    Abstract: BLF278 philips ferroxcube 4c6
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor


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    BLF278 SC08a OT262A1 2222 809 09006 capacitor BLF278 philips ferroxcube 4c6 PDF

    BLF278

    Abstract: transistor c32 blf278 rf power philips ferroxcube 4c6 2222 809 09006 capacitor resistor 2222 916 capacitor 0.01 k 400 MKT Philips 2222 867 4 n 608 VHF Transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of 1996 Oct 21 2003 Sep 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1


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    M3D091 BLF278 OT262A1 OT262A1 SCA75 613524/04/pp23 BLF278 transistor c32 blf278 rf power philips ferroxcube 4c6 2222 809 09006 capacitor resistor 2222 916 capacitor 0.01 k 400 MKT Philips 2222 867 4 n 608 VHF Transistors PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2 PDF

    2sc4571

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 PDF

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    2SC5008 2SC5008 IC SEM 2105 3771 nec PDF

    928 606 402 00

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


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    2SC5008 2SC5008 928 606 402 00 PDF

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


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    Q01414fl BLY89A 7Z675I bly89a Transistor bly89a PDF

    TI 60H

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. BUK456-60H


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    BUK456-60H T0220AB TI 60H PDF

    ic TT 2222

    Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
    Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


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    BLY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712 PDF